FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IMZC120R034M2HXKSA1

IMZC120R034M2HXKSA1

IMZC120R034M2HXKSA1

Infineon Technologies

2,087
RFQ
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 55A (Tc) 15V, 18V 34mOhm @ 20A, 18V 5.1V @ 6.4mA 45 nC @ 18 V +23V, -7V 1510 pF @ 800 V - 244W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
IGOT65R045D2AUMA1

IGOT65R045D2AUMA1

IGOT65R045D2AUMA1

Infineon Technologies

5,599
RFQ
Datasheet CoolGaN™ 20-BFSOP (0.295", 7.50mm Width) Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 34A (Tc) - - 1.6V @ 3.3mA 6 nC @ 3 V -10V 430 pF @ 400 V - 109W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-91
NVBG032N065M3S

NVBG032N065M3S

SIC MOS D2PAK-7L 32MOHM 650V M3S

onsemi

3,733
RFQ

-

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 52A (Tc) 15V, 18V 44mOhm @ 15A, 18V 4V @ 7.5mA 55 nC @ 18 V +22V, -8V 1409 pF @ 400 V - 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
IMLT65R026M2HXTMA1

IMLT65R026M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

7,869
RFQ

-

CoolSiC™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 82A (Tc) 15V, 20V 24mOhm @ 34.5A, 20V 5.6V @ 7mA 42 nC @ 18 V +23V, -7V 1499 pF @ 400 V - 365W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-16-6
DMWSH120H90SM3Q

DMWSH120H90SM3Q

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

2,149
RFQ

-

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 15V 97.5mOhm @ 20A, 15V 3.5V @ 5mA 50.9 nC @ 15 V +19V, -8V 1090 pF @ 1000 V - 246W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
SCT070H120G3AG

SCT070H120G3AG

H2PAK-7

STMicroelectronics

9,135
RFQ

-

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V, 18V 87mOhm @ 15A, 18V 4.2V @ 1mA 37 nC @ 18 V +18V, -5V 900 pF @ 850 V - 223W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
IGLT65R035D2ATMA1

IGLT65R035D2ATMA1

IGLT65R035D2ATMA1

Infineon Technologies

6,000
RFQ
Datasheet CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 47A (Tc) - - 1.6V @ 4.2mA 7.7 nC @ 3 V -10V 540 pF @ 400 V - 154W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8
IGOT65R035D2AUMA1

IGOT65R035D2AUMA1

IGOT65R035D2AUMA1

Infineon Technologies

8,956
RFQ
Datasheet CoolGaN™ 20-BFSOP (0.295", 7.50mm Width) Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 44A (Tc) - - 1.6V @ 4.2mA - -10V 540 pF @ 400 V - 134W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-91
IPQC60R017S7AXTMA1

IPQC60R017S7AXTMA1

MOSFET

Infineon Technologies

9,407
RFQ
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.89mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IMZA65R026M2HXKSA1

IMZA65R026M2HXKSA1

IMZA65R026M2HXKSA1

Infineon Technologies

2,166
RFQ
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 64A (Tc) 15V, 20V 24mOhm @ 34.5A, 20V 5.6V @ 7mA 42 nC @ 18 V +23V, -7V 1499 pF @ 400 V - 227W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
SCT070W120G3-4AG

SCT070W120G3-4AG

TO247-4

STMicroelectronics

4,612
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V, 18V 87mOhm @ 15A, 18V 4.2V @ 1mA 41 nC @ 18 V +18V, -5V 900 pF @ 850 V - 236W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
SCT070HU120G3AG

SCT070HU120G3AG

HU3PAK

STMicroelectronics

6,560
RFQ

-

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V, 18V 87mOhm @ 15A, 18V 4.2V @ 1mA 37 nC @ 18 V +22V, -10V 900 pF @ 850 V - 223W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount HU3PAK
IMT65R022M1HXUMA1

IMT65R022M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies

7,152
RFQ
Datasheet CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
DMWSH120H43SM3

DMWSH120H43SM3

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

6,863
RFQ

-

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 72.7A (Tc) 15V 43mOhm @ 40A, 15V 3.6V @ 11.5mA 105 nC @ 15 V +19V, -8V 2187 pF @ 1000 V - 341W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
DMWSH120H43SM4

DMWSH120H43SM4

SIC MOSFET BVDSS: >1000V TO247-4

Diodes Incorporated

2,860
RFQ

-

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 72.7A (Tc) 15V 43mOhm @ 40A, 15V 3.6V @ 11.5mA 105 nC @ 15 V +19V, -8V 2187 pF @ 1000 V - 341W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
SCT040W120G3-4

SCT040W120G3-4

SILICON CARBIDE POWER MOSFET 120

STMicroelectronics

7,708
RFQ
Datasheet * - Tube Active - - - - - - - - - - - - - - - - -
IGOT65R025D2AUMA1

IGOT65R025D2AUMA1

IGOT65R025D2AUMA1

Infineon Technologies

3,963
RFQ
Datasheet CoolGaN™ 20-BFSOP (0.295", 7.50mm Width) Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 61A (Tc) - - 1.6V @ 6.1mA 11 nC @ 3 V -10V 780 pF @ 400 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-91
IGLT65R025D2AUMA1

IGLT65R025D2AUMA1

IGLT65R025D2AUMA1

Infineon Technologies

2,691
RFQ
Datasheet CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 67A (Tc) - - 1.6V @ 6.1mA 11 nC @ 3 V -10V 780 pF @ 400 V - 219W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8
SCTWA40N120G2V

SCTWA40N120G2V

DISCRETE

STMicroelectronics

7,567
RFQ
Datasheet - TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 1200 V 36A (Tc) 18V 100mOhm @ 20A, 18V 4.9V @ 1mA 61 nC @ 18 V +18V, -5V 1233 pF @ 800 V - 278W (Tc) -55°C ~ 200°C (TJ) - - Through Hole TO-247 Long Leads
SCTWA40N120G2V-4

SCTWA40N120G2V-4

DISCRETE

STMicroelectronics

3,763
RFQ

-

- TO-247-4 Bulk Active N-Channel MOSFET (Metal Oxide) 1200 V 36A (Tc) 18V 100mOhm @ 20A, 18V 4.9V @ 1mA 61 nC @ 18 V +18V, -5V 1233 pF @ 800 V - 277W (Tc) -55°C ~ 200°C (TJ) - - Through Hole TO-247-4
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