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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SCT040W120G3AG

SCT040W120G3AG

HIP-247 IN LINE HEAT SINK 2MM

STMicroelectronics

100
RFQ
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 15V, 18V 54mOhm @ 16A, 18V 4.2V @ 5mA 56 nC @ 18 V +22V, -10V 1329 pF @ 800 V - 312W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole HiP247™
DMWS120H100SM4

DMWS120H100SM4

SIC MOSFET BVDSS: >1000V TO247-4

Diodes Incorporated

27
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 37.2A (Tc) 15V 100mOhm @ 20A, 15V 3.5V @ 5mA 52 nC @ 15 V +19V, -8V 1516 pF @ 1000 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
STW65N023M9-4

STW65N023M9-4

N-CHANNEL 650 V, 19.9 MOHM TYP.,

STMicroelectronics

59
RFQ
Datasheet - TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 95A (Tc) 10V 23mOhm @ 48A, 10V 4.2V @ 250µA 230 nC @ 10 V ±30V 8844 pF @ 400 V - 463W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
SCT025H120G3AG

SCT025H120G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

85
RFQ
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SCT018H65G3AG

SCT018H65G3AG

H2PAK-7

STMicroelectronics

100
RFQ
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 55A (Tc) 15V, 18V 27mOhm @ 30A, 18V 4.2V @ 5mA 79.4 nC @ 18 V +22V, -10V 2124 pF @ 400 V - 385W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
SCT018W65G3-4AG

SCT018W65G3-4AG

TO247-4

STMicroelectronics

100
RFQ
Datasheet - TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 55A (Tc) 15V, 18V 27mOhm @ 30A, 18V 4.2V @ 5mA 77 nC @ 18 V +22V, -10V 2077 pF @ 400 V - 398W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
SCT025W120G3AG

SCT025W120G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

100
RFQ
Datasheet * - Tube Active - - - - - - - - - - - - - - - - -
SCT025W120G3-4AG

SCT025W120G3-4AG

TO247-4

STMicroelectronics

75
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) 15V, 18V 37mOhm @ 25A, 18V 4.2V @ 5mA 73 nC @ 18 V +18V, -5V 1990 pF @ 800 V - 388W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
MSC015SMA070B4N

MSC015SMA070B4N

MOSFET SIC 700 V 15 MOHM TO-247-

Microchip Technology

60
RFQ

-

 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 700 V 112A (Tc) 18V, 20V 19mOhm @ 40A, 20V 5V @ 4mA 215 nC @ 20 V +23V, -10V 4324 pF @ 700 V - 524W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
SCT012W90G3-4AG

SCT012W90G3-4AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

100
RFQ

-

 * - Tube Active - - - - - - - - - - - - - - - - -
SCT011HU75G3AG

SCT011HU75G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

50
RFQ
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
MSC017SMA120B4N

MSC017SMA120B4N

MOSFET SIC 1200 V 17 MOHM TO-247

Microchip Technology

30
RFQ

-

 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 119A (Tc) 18V, 20V 22mOhm @ 40A, 20V 5V @ 4.5mA 194 nC @ 20 V +23V, -10V 4274 pF @ 1200 V - 577W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
MSC025SMA120B4N

MSC025SMA120B4N

MOSFET SIC 1200 V 25 MOHM TO-247

Microchip Technology

30
RFQ

-

 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 113A (Tc) 18V, 20V 31mOhm @ 40A, 20V 5V @ 3mA 232 nC @ 20 V +23V, -10V 3633 pF @ 1000 V - 577W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
IXTH1N300P3HV

IXTH1N300P3HV

MOSFET N-CH 3000V 1A TO247HV

Littelfuse Inc.

8
RFQ
Datasheet Polar P3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 3000 V 1A (Tc) 10V 50Ohm @ 500mA, 10V 4V @ 250µA 30.6 nC @ 10 V ±20V 895 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247HV
AIMZHN120R020M1TXKSA1

AIMZHN120R020M1TXKSA1

SIC_DISCRETE

Infineon Technologies

30
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 18V, 20V 25mOhm @ 43A, 20V 5.1V @ 13.7mA 82 nC @ 20 V +23V, -5V 2667 pF @ 800 V - 429W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
DMWSH120H28SM4Q

DMWSH120H28SM4Q

SIC MOSFET BVDSS: >1000V TO247-4

Diodes Incorporated

38
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 156.3 nC @ 15 V +19V, -8V - - 429W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
MSC080SMA120JS15

MSC080SMA120JS15

MOSFET SIC 1200V 80 MOHM 15A SOT

Microchip Technology

15
RFQ
Datasheet - SOT-227-4, miniBLOC Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
MSC017SMA120B

MSC017SMA120B

MOSFET SIC 1200V 17 MOHM TO-247

Microchip Technology

38
RFQ
Datasheet - TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 113A (Tc) 20V 22mOhm @ 40A, 20V 2.7V @ 4.5mA (Typ) 249 nC @ 20 V +22V, -10V 5280 pF @ 1000 V - 455W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
IDYH50G200C5XKSA1

IDYH50G200C5XKSA1

SIC DISCRETE

Infineon Technologies

75
RFQ

-

 - - Tube Active - - - - - - - - - - - - - - - - -
FF100R12W1T7EB11BPSA1

FF100R12W1T7EB11BPSA1

EASY STANDARD

Infineon Technologies

24
RFQ
Datasheet - - Tray Active - - - - - - - - - - - - - - - - -
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