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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCTWA90N65G2VSILICON CARBIDE POWER MOSFET 650 |
8 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 119A (Tc) | 18V | 24mOhm @ 50A, 18V | 5V @ 1mA | 157 nC @ 18 V | +22V, -10V | 3380 pF @ 400 V | - | 565W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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APT50M75JLLU2MOSFET N-CH 500V 51A SOT227 |
31 |
|
Datasheet | POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 25.5A, 10V | 5V @ 1mA | 123 nC @ 10 V | ±30V | 5590 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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IXFN64N60PMOSFET N-CH 600V 50A SOT227B |
90 |
|
Datasheet | HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 96mOhm @ 500mA, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
IXFB40N110PMOSFET N-CH 1100V 40A PLUS264 |
32 |
|
Datasheet | HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1100 V | 40A (Tc) | 10V | 260mOhm @ 20A, 10V | 6.5V @ 1mA | 310 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
|
MSC015SMA070SSICFET N-CH 700V 126A D3PAK |
20 |
|
Datasheet | - | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 126A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA (Typ) | 215 nC @ 20 V | +23V, -10V | 4500 pF @ 700 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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IXFK400N15X3MOSFET N-CH 150V 400A TO264 |
80 |
|
Datasheet | HiPerFET™, Ultra X3 | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 3mOhm @ 200A, 10V | 4.5V @ 8mA | 365 nC @ 10 V | ±20V | 23700 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 |
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IXFB82N60Q3MOSFET N-CH 600V 82A PLUS264 |
21 |
|
Datasheet | HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 82A (Tc) | 10V | 75mOhm @ 41A, 10V | 6.5V @ 8mA | 275 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
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APT10M11LVRGMOSFET N-CH 100V 100A TO264 |
19 |
|
Datasheet | POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 11mOhm @ 50A, 10V | 4V @ 2.5mA | 450 nC @ 10 V | ±30V | 10300 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (L) |
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IXTN46N50LMOSFET N-CH 500V 46A SOT-227B |
16 |
|
Datasheet | Linear | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 20V | 160mOhm @ 500mA, 20V | 6V @ 250µA | 260 nC @ 15 V | ±30V | 7000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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MSC40SM120JCU2SICFET N-CH 1.2KV 55A SOT227 |
12 |
|
Datasheet | - | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
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MSC017SMA120B4MOSFET SIC 1200V 17 MOHM TO-247 |
16 |
|
Datasheet | - | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 113A (Tc) | 20V | 22mOhm @ 40A, 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | +22V, -10V | 5280 pF @ 1000 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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APT58M80JMOSFET N-CH 800V 60A SOT227 |
2 |
|
Datasheet | - | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 60A (Tc) | 10V | 110mOhm @ 43A, 10V | 5V @ 5mA | 570 nC @ 10 V | ±30V | 17550 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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MSC70SM120JCU3SICFET N-CH 1.2KV 89A SOT227 |
5 |
|
Datasheet | - | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 395W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
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BSM180C12P2E202SICFET N-CH 1200V 204A MODULE |
4 |
|
Datasheet | - | Module | Tray | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 204A (Tc) | - | - | 4V @ 35.2mA | - | +22V, -6V | 20000 pF @ 10 V | - | 1360W (Tc) | 175°C (TJ) | - | - | Chassis Mount | Module |
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BSM300C12P3E201SICFET N-CH 1200V 300A MODULE |
4 |
|
Datasheet | - | Module | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 300A (Tc) | - | - | 5.6V @ 80mA | - | +22V, -4V | 15000 pF @ 10 V | - | 1360W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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BSM400C12P3G202SICFET N-CH 1200V 400A MODULE |
4 |
|
Datasheet | - | Module | Tray | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 400A (Tc) | - | - | 5.6V @ 106.8mA | - | +22V, -4V | 17000 pF @ 10 V | - | 1570W (Tc) | 175°C (TJ) | - | - | Chassis Mount | Module |
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DMN2055UW-7MOSFET BVDSS: 8V~24V SOT323 T&R |
600 |
|
Datasheet | - | SC-70, SOT-323 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 3.1A (Ta) | 2.5V, 4.5V | 46mOhm @ 3.6A, 4.5V | 1V @ 250µA | 4.3 nC @ 4.5 V | ±8V | 400 pF @ 10 V | - | 520mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-323 |
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DMN10H220LFDF-7MOSFET BVDSS: 61V~100V U-DFN2020 |
658 |
|
Datasheet | - | 6-UDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.2A (Ta) | 4.5V, 10V | 225mOhm @ 2A, 10V | 2.5V @ 250µA | 6.7 nC @ 10 V | ±20V | 384 pF @ 25 V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | U-DFN2020-6 (Type F) |
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DMN2025UFDF-7MOSFET N-CH 20V 6.5A 6UDFN |
95 |
|
Datasheet | - | 6-UDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 1.8V, 4.5V | 25mOhm @ 4A, 4.5V | 1V @ 250µA | 12.3 nC @ 10 V | ±10V | 486 pF @ 10 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | U-DFN2020-6 (Type F) |
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DMP2040UVT-7MOSFET P-CH 20V TSOT26 |
870 |
|
Datasheet | - | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.5A (Ta), 13A (Tc) | 2.5V, 4.5V | 38mOhm @ 8.9A, 4.5V | 1.5V @ 250µA | 8.6 nC @ 4.5 V | ±12V | 834 pF @ 10 V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TSOT-26 |
