FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPQC60T040S7AXTMA1

IPQC60T040S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

75
RFQ

-

CoolMOS™ 22-PowerBSOP Module Box Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 780µA 83 nC @ 12 V ±20V 3128 pF @ 300 V - 272W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
STW65N045M9-4

STW65N045M9-4

N-CHANNEL 650 V, 39 MOHM TYP., 5

STMicroelectronics

90
RFQ
Datasheet - TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 45mOhm @ 28A, 10V 4.2V @ 250µA 80 nC @ 10 V ±30V 4610 pF @ 400 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
SCT040TO65G3

SCT040TO65G3

SILICON CARBIDE POWER MOSFET 650

STMicroelectronics

100
RFQ
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AIMZH120R080M1TXKSA1

AIMZH120R080M1TXKSA1

SIC_DISCRETE

Infineon Technologies

17
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V, 20V 100mOhm @ 10A, 20V 5.1V @ 3.3mA 24 nC @ 20 V +23V, -5V 671 pF @ 800 V - 169W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-11
IPDQ60T022S7XTMA1

IPDQ60T022S7XTMA1

HIGH POWER_NEW

Infineon Technologies

100
RFQ
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPP60R016CM8XKSA1

IPP60R016CM8XKSA1

IPP60R016CM8XKSA1

Infineon Technologies

23
RFQ

-

CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 135A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
APT10M19BVRG

APT10M19BVRG

MOSFET N-CH 100V 75A TO247

Microchip Technology

53
RFQ
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 19mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 6120 pF @ 25 V - - - - - Through Hole TO-247 [B]
IPQC60T022S7AXTMA1

IPQC60T022S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

100
RFQ
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPDQ60T022S7AXTMA1

IPDQ60T022S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

100
RFQ
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SCT040W65G3-4AG

SCT040W65G3-4AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

75
RFQ
Datasheet * - Tube Active - - - - - - - - - - - - - - - - -
APT5015BVFRG

APT5015BVFRG

MOSFET N-CH 500V 32A TO247

Microchip Technology

40
RFQ
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) - 150mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - - - Through Hole TO-247 [B]
DMWSH120H90SM4Q

DMWSH120H90SM4Q

SIC MOSFET BVDSS: >1000V TO247-4

Diodes Incorporated

17
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 15V 97.5mOhm @ 20A, 15V 3.5V @ 5mA 47.6 nC @ 15 V +19V, -8V 1112 pF @ 1000 V - 235W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
AIMCQ120R040M1TXTMA1

AIMCQ120R040M1TXTMA1

SIC_DISCRETE

Infineon Technologies

90
RFQ

-

CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 61A (Tc) 18V, 20V 50mOhm @ 20A, 20V 5.1V @ 6.4mA 43 nC @ 20 V +25V, -10V 1264 pF @ 800 V - 341W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IPQC60T017S7XTMA1

IPQC60T017S7XTMA1

HIGH POWER_NEW

Infineon Technologies

100
RFQ
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 113A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.88mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
IPDQ60T017S7XTMA1

IPDQ60T017S7XTMA1

HIGH POWER_NEW

Infineon Technologies

68
RFQ
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 113A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.88mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
IPDQ60T017S7AXTMA1

IPDQ60T017S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

100
RFQ
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPQC60T017S7AXTMA1

IPQC60T017S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

100
RFQ
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SCT027H65G3AG

SCT027H65G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

100
RFQ
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AIMCQ120R030M1TXTMA1

AIMCQ120R030M1TXTMA1

SIC_DISCRETE

Infineon Technologies

63
RFQ

-

CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 78A (Tc) 18V, 20V 38mOhm @ 27A, 20V 5.1V @ 8.6mA 57 nC @ 20 V +25V, -10V 1738 pF @ 800 V - 417W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
MSC040SMA120B4N

MSC040SMA120B4N

MOSFET SIC 1200 V 40 MOHM TO-247

Microchip Technology

60
RFQ

-

- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 71A (Tc) 18V, 20V 50mOhm @ 40A, 20V 5V @ 2mA 137 nC @ 20 V +23V, -10V 1962 pF @ 1000 V - 372W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
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