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FET, MOSFET Arrays
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSCSM120AM027T6AGMOSFET 2N-CH 1200V 733A |
8,830 |
|
Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 27mA | 2088nC @ 20V | 27000pF @ 1000V | 2.97kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM027D3AGMOSFET 2N-CH 1200V 733A |
5,173 |
|
Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 27mA | 2088nC @ 20V | 27000pF @ 1000V | 2.97kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM03T6LIAGMOSFET 2N-CH 1200V 805A |
2,067 |
|
Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 805A (Tc) | 3.1mOhm @ 400A, 20V | 2.8V @ 30mA | 2320nC @ 20V | 30200pF @ 1000V | 3.215kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM02T6LIAGMOSFET 2N-CH 1200V 947A |
8,818 |
|
Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 947A (Tc) | 2.6mOhm @ 480A, 20V | 2.8V @ 36mA | 2784nC @ 20V | 36200pF @ 1000V | 3.75kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM027CD3AGMOSFET 2N-CH 1200V 733A D3 |
1 |
|
Datasheet | - | Module | Box | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 9mA | 2088nC @ 20V | 27000pF @1000V | 2.97kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | D3 |
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DMG6301UDW-13MOSFET 2N-CH 25V 0.24A SOT363 |
3,889 |
|
Datasheet | - | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 25V | 240mA | 4Ohm @ 400mA, 4.5V | 1.5V @ 250µA | 0.36nC @ 4.5V | 27.9pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-363 |
|
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DMN62D0UV-7MOSFET 2N-CH 60V 0.49A SOT563 |
6,994 |
|
Datasheet | - | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 60V | 490mA (Ta) | 2Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.5nC @ 4.5V | 32pF @ 30V | 470mW (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-563 |
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2N7002DWS-7MOSFET 2N-CH 60V 0.247A SOT363 |
5,300 |
|
Datasheet | - | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 247mA (Ta) | 4Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.4nC @ 4.5V | 41pF @ 25V | 290mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-363 |
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SH8KE5TB1100V 2.5A, DUAL NCH+NCH, SOP8, P |
9,925 |
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- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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HP8KB5TB140V 16.5A, DUAL NCH+NCH, HSOP8, |
3,999 |
|
- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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HP8KC5TB160V 12A, DUAL NCH+NCH, HSOP8, PO |
9,155 |
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- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ISA220280C03LMDSXTMA1ISA220280C03LMDSXTMA1 |
7,780 |
|
Datasheet | OptiMOS™ 3 | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | - | 30V | 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc) | 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V | 2.7V @ 1mA | 13.4nC @ 10V | 1400pF @ 15V | 1.4W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8-920 |
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IRF7328TRPBFMOSFET 2P-CH 30V 8A 8SO |
5,840 |
|
Datasheet | HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.5V @ 250µA | 78nC @ 10V | 2675pF @ 25V | 2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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HT8KB6TB1MOSFET 2N-CH 40V 8A 8HSMT |
6,890 |
|
Datasheet | - | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 40V | 8A (Ta), 15A (Tc) | 17.2mOhm @ 8A, 10V | 2.5V @ 1mA | 10.6nC @ 10V | 530pF @ 20V | 2W (Ta), 14W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSMT (3.2x3) |
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IQE220N15NM5SCATMA1MOSFET 2N-CH 150V 8WHSON |
6,934 |
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Datasheet | OptiMOS™ | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 150V | - | - | - | - | - | - | - | - | - | Surface Mount | PG-WHSON-8-1 |
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FAM65CR51ADZ1MOSFET 2N-CH 650V 41A APMCD-B16 |
3,999 |
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Datasheet | - | 12-SSIP Exposed Pad, Formed Leads | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 650V | 41A (Tc) | 51mOhm @ 20A, 10V | 5V @ 3.3mA | 123nC @ 10V | 4864pF @ 400V | 189W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | APMCD-B16 |
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NVXK2TR80WDTMOSFET 4N-CH 1200V 20A APM32 |
5,193 |
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Datasheet | - | 32-PowerDIP Module (1.311", 33.30mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 20A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 82W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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NVXK2VR80WXT2MOSFET 6N-CH 1200V 31A APM32 |
3,969 |
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Datasheet | - | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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NVXK2PR80WXT2MOSFET 4N-CH 1200V 31A APM32 |
2,267 |
|
Datasheet | - | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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M1P45M12W2-1LAMOSFET 6N-CH 1200V ACEPACK DMT |
5,427 |
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Datasheet | ECOPACK® | 32-PowerDIP Module (1.264", 32.10mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 30A (Tc) | 60.5mOhm @ 20A, 18V | 5V @ 1mA | 100nC @ 18V | 2086pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Through Hole | ACEPACK DMT-32 |
