FET, MOSFET Arrays

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
M1F45M12W2-1LA

M1F45M12W2-1LA

MOSFET 4N-CH 1200V ACEPACK DMT

STMicroelectronics

9,108
RFQ
Datasheet ECOPACK® 32-PowerDIP Module (1.264", 32.10mm) Tube Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 30A (Tc) 64mOhm @ 20A, 18V 5V @ 1mA 100nC @ 18V 2086pF @ 800V - -40°C ~ 175°C (TJ) - - Through Hole ACEPACK DMT-32
FF4MR12W2M1HB11BPSA1

FF4MR12W2M1HB11BPSA1

MOSFET 2N-CH 1200V 170A MODULE

Infineon Technologies

6,293
RFQ
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 170A (Tj) 4mOhm @ 200A, 18V 5.15V @ 80mA 594nC @ 18V 17600pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
FS02MR12A8MA2BBPSA1

FS02MR12A8MA2BBPSA1

MOSFET 6N-CH 1200V 390A

Infineon Technologies

2,141
RFQ

-

HybridPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 390A (Tj) 1.9mOhm @ 390A, 18V 4.55V @ 160mA 1.19µC @ 18V 34500pF @ 750V - -40°C ~ 175°C (TJ) - - Chassis Mount -
BSS8402DWQ-7

BSS8402DWQ-7

MOSFET N/P-CH 60V/50V SOT363

Diodes Incorporated

4,342
RFQ
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V, 50V 115mA, 130mA 13.5Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V, 45pF @ 25V 200mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
DMC4029SK4-13

DMC4029SK4-13

MOSFET N/P-CH 40V 8.3A TO252-4L

Diodes Incorporated

7,415
RFQ
Datasheet - TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 40V 8.3A 24mOhm @ 6A, 10V 3V @ 250µA 19.1nC @ 20V 1060pF @ 20V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount TO-252-4L
UT6ME5TCR

UT6ME5TCR

MOSFET N/P-CH 100V 2A HUML2020L8

Rohm Semiconductor

6,048
RFQ
Datasheet - 6-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 100V 2A (Ta), 1A (Ta) 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V 2.5V @ 1mA 2.8nC @ 10V, 6.7nC @ 10V 90pF @ 50V 2W (Ta) 150°C (TJ) - - Surface Mount HUML2020L8
IRLHS6276TRPBF

IRLHS6276TRPBF

MOSFET 2N-CH 20V 4.5A PQFN

Infineon Technologies

5,999
RFQ
Datasheet HEXFET® 6-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 45mOhm @ 3.4A, 4.5V 1.1V @ 10µA 3.1nC @ 4.5V 310pF @ 10V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount 6-PQFN Dual (2x2)
MSCSM70TAM19CT3AG

MSCSM70TAM19CT3AG

MOSFET 6N-CH 700V 124A SP3F

Microchip Technology

1
RFQ
Datasheet - Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM70DUM017AG

MSCSM70DUM017AG

MOSFET 2N-CH 700V 1021A

Microchip Technology

5,247
RFQ

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 1021A (Tc) 2.1mOhm @ 360A, 20V 2.4V @ 36mA 1935nC @ 20V 40500pF @ 700V 2750W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
BSM600D12P4G103

BSM600D12P4G103

MOSFET 2N-CH 1200V 567A MODULE

Rohm Semiconductor

2,691
RFQ
Datasheet - Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 567A (Tc) - 4.8V @ 291.2mA - 59000pF @ 10V 1.78kW (Tc) 175°C (TJ) - - Chassis Mount Module
MSCSM170AM058CT6LIAG

MSCSM170AM058CT6LIAG

MOSFET 2N-CH 1700V 353A

Microchip Technology

3,712
RFQ
Datasheet - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1.642kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF2600UXTR33T2M1BPSA1

FF2600UXTR33T2M1BPSA1

MOSFET 2N-CH 3300V AG-XHP2K33

Infineon Technologies

8,488
RFQ
Datasheet CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 3300V (3.3kV) 720A (Tc) 3.1mOhm @ 750A, 15V 5.55V @ 675mA 3750nC @ 15V 152000pF @ 1.8kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-XHP2K33
DMN2016LFG-7

DMN2016LFG-7

MOSFET 2N-CH 20V 5.2A 8DFN

Diodes Incorporated

5,306
RFQ
Datasheet - 8-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 5.2A 18mOhm @ 6A, 4.5V 1.1V @ 250µA 16nC @ 4.5V 1472pF @ 10V 770mW -55°C ~ 150°C (TJ) - - Surface Mount U-DFN3030-8
ZXMN3A06DN8TA

ZXMN3A06DN8TA

MOSFET 2N-CH 30V 4.9A 8SO

Diodes Incorporated

13
RFQ
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.9A 35mOhm @ 9A, 10V 1V @ 250µA (Min) 17.5nC @ 10V 796pF @ 25V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
STS1DNC45

STS1DNC45

MOSFET 2N-CH 450V 0.4A 8SOIC

STMicroelectronics

7,067
RFQ
Datasheet SuperMESH™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 450V 400mA 4.5Ohm @ 500mA, 10V 3.7V @ 250µA 10nC @ 10V 160pF @ 25V 1.6W 150°C (TJ) - - Surface Mount 8-SOIC
MSCSM120AM50CT1AG

MSCSM120AM50CT1AG

MOSFET 2N-CH 1200V 55A SP1F

Microchip Technology

8,032
RFQ
Datasheet - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP1F
MSCSM70AM10CT3AG

MSCSM70AM10CT3AG

MOSFET 2N-CH 700V 241A SP3F

Microchip Technology

6,864
RFQ
Datasheet - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM170AM23CT1AG

MSCSM170AM23CT1AG

MOSFET 2N-CH 1700V 124A

Microchip Technology

8,228
RFQ
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170AM11CT3AG

MSCSM170AM11CT3AG

MOSFET 2N-CH 1700V 240A

Microchip Technology

2,547
RFQ
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 240A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1.14kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170DUM058AG

MSCSM170DUM058AG

MOSFET 2N-CH 1700V 353A

Microchip Technology

1
RFQ
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1642W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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