FET, MOSFET Arrays

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NVXK2VR80WDT2

NVXK2VR80WDT2

MOSFET 6N-CH 1200V 20A APM32

onsemi

2,337
RFQ
Datasheet - 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 20A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 82W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
M1F80M12W2-1LA

M1F80M12W2-1LA

AUTOMOTIVE-GRADE ACEPACK DMT-32

STMicroelectronics

9,403
RFQ
Datasheet * - Tube Active - - - - - - - - - - - - - - -
NXH040F120MNF1PG

NXH040F120MNF1PG

MOSFET 4N-CH 1200V 30A 22PIM

onsemi

6,006
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
MSCSM120AM50T1AG

MSCSM120AM50T1AG

MOSFET 2N-CH 1200V 55A

Microchip Technology

7,822
RFQ
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH010P90MNF1PG

NXH010P90MNF1PG

MOSFET 2N-CH 900V 154A

onsemi

3,091
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 900V 154A (Tc) 14mOhm @ 100A, 15V 4.3V @ 40mA 546.4nC @ 15V 7007pF @ 450V 328W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH010P120MNF1PG

NXH010P120MNF1PG

MOSFET 2N-CH 1200V 114A

onsemi

5,990
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH020P120MNF1PG

NXH020P120MNF1PG

MOSFET 2N-CH 1200V 51A

onsemi

2,676
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 51A (Tc) 30mOhm @ 50A, 20V 4.3V @ 20mA 213.5nC @ 20V 2420pF @ 800V 119W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH006P120M3F2PTHG

NXH006P120M3F2PTHG

MOSFET 2N-CH 1200V 191A 36PIM

onsemi

1
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 191A (Tc) 8mOhm @ 100A, 18V 4.4V @ 80mA 622nC @ 20V 11914pF @ 800V 556W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
A2U8M12W3-FC

A2U8M12W3-FC

MOSFET 4N-CH 750V/1.2KV 180A

STMicroelectronics

9,411
RFQ
Datasheet ECOPACK® Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 750V, 1.2kV 180A, 140A 8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V 4.2V @ 2mA, 4V @ 2mA 288nC @ 18V, 304nC @ 18V 7660pF @ 400V, 7370pF @ 800V - -55°C ~ 150°C (TJ) - - Chassis Mount -
BSM300D12P4G101

BSM300D12P4G101

MOSFET 2N-CH 1200V 291A MODULE

Rohm Semiconductor

2,899
RFQ
Datasheet - Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 291A (Tc) - 4.8V @ 145.6mA - 30000pF @ 10V 925W (Tc) 175°C (TJ) - - Chassis Mount Module
MSCSM120HRM052NG

MSCSM120HRM052NG

MOSFET 4N-CH 1200V/700V 472A

Microchip Technology

5,419
RFQ
Datasheet - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 472A (Tc), 442A (Tc) 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V 2.8V @ 18mA, 2.4V @ 16mA 1392nC @ 20V, 860nC @ 20V 18100pF @ 1000V, 18000pF @ 700V 1.846kW (Tc), 1.161kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FS03MR12A7MA2BHPSA1

FS03MR12A7MA2BHPSA1

MOSFET 6N-CH 1200V 310A

Infineon Technologies

8,397
RFQ
Datasheet HybridPACK™ Module Box Active Silicon Carbide (SiC) 6 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 310A 2.54mOhm @ 310A, 18V 4.55V @ 120mA 870nC @ 18V 25900pF @ 750V - -40°C ~ 175°C (TJ) - - Chassis Mount -
FF4000UXTR33T2M1BPSA1

FF4000UXTR33T2M1BPSA1

XHP HV

Infineon Technologies

3,462
RFQ
Datasheet XHP™2 Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 3300V (3.3kV) 500A (Tc) 4.8mOhm @ 500A, 15V 5.55V @ 450mA 2500nC @ 15V 101000pF @ 1800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-XHP2K17
FF2000UXTR33T2M1BPSA1

FF2000UXTR33T2M1BPSA1

MOSFET 2N-CH 3300V 9AG-XHP2K33

Infineon Technologies

1
RFQ
Datasheet CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 3300V (3.3kV) 925A (Tc) 2.4mOhm @ 1kA, 15V 5.55V @ 900mA 5000nC @ 15V 203000pF @ 1.8kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-XHP2K33
DMN31D5UDR4-7

DMN31D5UDR4-7

MOSFET 2N-CH 30V 0.5A 6DFN

Diodes Incorporated

4,201
RFQ

-

- 6-XFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 500mA (Ta) 1.5Ohm @ 100mA, 4.5V 900mV @ 250µA 50pC @ 4.5V 22.2pF @ 15V 370mW -55°C ~ 150°C (TJ) - - Surface Mount X2-DFN1010-6 (Type UXC)
DMN31D5UDR4-7R

DMN31D5UDR4-7R

MOSFET 2N-CH 30V 0.5A 6DFN

Diodes Incorporated

2,654
RFQ

-

- 6-XFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 500mA (Ta) 1.5Ohm @ 100mA, 4.5V 900mV @ 250µA 50pC @ 4.5V 22.2pF @ 15V 370mW -55°C ~ 150°C (TJ) - - Surface Mount X2-DFN1010-6 (Type UXC)
DMN31D5UDW-13

DMN31D5UDW-13

MOSFET 2N-CH 30V 0.43A SOT363

Diodes Incorporated

7,374
RFQ
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 430mA (Ta) 1.5Ohm @ 100mA, 4.5V 900mV @ 250µA 0.3nC @ 4.5V 15.4pF @ 15V 330mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
DMP32D9UDAQ-7B

DMP32D9UDAQ-7B

MOSFET 2P-CH 30V 0.22A 6DFN

Diodes Incorporated

6,870
RFQ
Datasheet - 6-SMD, No Lead Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 220mA (Ta) 5Ohm @ 100mA, 4.5V 1V @ 250µA 350nC @ 4.5V 21.8pF @ 15V 360mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount X2-DFN0806-6
DMC31D5UDAQ-7B

DMC31D5UDAQ-7B

MOSFET N/P-CH 30V 0.4A 6DFN

Diodes Incorporated

2,226
RFQ
Datasheet - 6-SMD, No Lead Bulk Active MOSFET (Metal Oxide) N and P-Channel Complementary - 30V 400mA (Ta), 220mA (Ta) 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V 1V @ 250µA 0.38nC @ 4.5V, 0.35nC @ 4.5V 22.6pF @ 15V, 21.8pF @ 15V 370mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount X2-DFN0806-6
DMN31D5UDAQ-7B

DMN31D5UDAQ-7B

MOSFET 2N-CH 30V 0.4A 6DFN

Diodes Incorporated

4,523
RFQ
Datasheet - 6-SMD, No Lead Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 30V 400mA (Ta) 1.5Ohm @ 100mA, 4.5V 1V @ 250µA 0.38nC @ 4.5V 22.6pF @ 15V 370mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount X2-DFN0806-6
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