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Single Diodes
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JANTX1N5417DIODE GEN PURP 200V 3A AXIAL |
204 |
|
Datasheet | - | B, Axial | Bulk | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5615USDIODE GEN PURP 200V 1A D-5A |
630 |
|
Datasheet | - | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 200 V | 45pF @ 12V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
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JANTX1N6642DIODE GEN PURP 75V 300MA DO35 |
6,996 |
|
Datasheet | - | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 75 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
STPSC20065WYDIODE SIL CARBIDE 650V 20A DO247 |
258 |
|
Datasheet | ECOPACK®2 | DO-247-2 (Straight Leads) | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.45 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 650 V | 1250pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-247 | -40°C ~ 175°C |
|
FFSB3065BDIODE SIL CARB 650V 73A D2PAK-2 |
3,732 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 73A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 1280pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
IDDD20G65C6XTMA1DIODE SIL CARB 650V 51A HDSOP-10 |
606 |
|
Datasheet | CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 51A | - | No Recovery Time > 500mA (Io) | 0 ns | 67 µA @ 420 V | 970pF @ 1V, 1MHz | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
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JANTX1N5554DIODE GEN PURP 1KV 5A AXIAL |
118 |
|
Datasheet | - | B, Axial | Bulk | Active | Standard | 1000 V | 5A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 2 µA @ 1000 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N5712-1DIODE SCHOTTKY 20V 750MA DO35 |
154 |
|
Datasheet | - | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 20 V | 750mA | 1 V @ 35 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
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FFSH10120A-F085DIODE SIL CARB 1.2KV 17A TO247-2 |
895 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 17A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 612pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
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FFSB3065B-F085DIODE SIL CARBIDE 650V 73A D2PAK |
4,032 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 73A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 1280pF @ 1V, 100kHz | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
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FFSB10120A-F085DIODE SIL CARB 1.2KV 21A D2PAK |
197 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 21A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 612pF @ 1V, 100kHz | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
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FFSB20120ADIODE SCHOTTKY 1.2KV 32A D2PAK-3 |
503 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 32A | 1.75 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 1200 V | 1220pF @ 1V, 100KHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
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NDSH10170ADIODE SIL CARB 1.7KV 16A TO247-2 |
374 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 16A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1700 V | 856pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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1N5804USDIODE GEN PURP 100V 1A D-5A |
1,182 |
|
Datasheet | - | SQ-MELF, A | Bulk | Active | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
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JANTX1N5551USDIODE GEN PURP 400V 5A B SQ-MELF |
155 |
|
Datasheet | - | SQ-MELF, B | Bulk | Active | Standard | 400 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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STPSC20H12DDIODE SIL CARB 1.2KV 20A TO220AC |
806 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1650pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
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SCS220AJTLLDIODE SIL CARB 650V 20A TO263AB |
1,713 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | - | - | Surface Mount | TO-263AB | 175°C (Max) |
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STPSC20H12WLDIODE SIL CARB 1.2KV 20A DO247 |
142 |
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Datasheet | ECOPACK®2 | DO-247-2 (Straight Leads) | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1650pF @ 0V, 1MHz | - | - | Through Hole | DO-247 | -40°C ~ 175°C |
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IDWD20G120C5XKSA1DIODE SIL CARB 1.2KV 62A TO247-2 |
240 |
|
Datasheet | CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 62A | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 166 µA @ 1200 V | 1368pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
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IDW30G65C5XKSA1DIODE SIL CARB 650V 30A TO247-3 |
931 |
|
Datasheet | CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 650 V | 860pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
