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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDL08G65C5XUMA2 DIODE SIL CARBIDE 650V 8A VSON-4 Infineon Technologies	7,147	RFQ	Datasheet	CoolSiC™+	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	250pF @ 1V, 1MHz	-	-	Surface Mount	PG-VSON-4	-55°C ~ 150°C
STTH3010W DIODE GEN PURP 1KV 30A DO247 STMicroelectronics	1,194	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1000 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	15 µA @ 1000 V	-	-	-	Through Hole	DO-247	175°C (Max)
STTH6004W DIODE GEN PURP 400V 60A DO247 STMicroelectronics	6,790	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	400 V	60A	1.2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	50 µA @ 400 V	-	-	-	Through Hole	DO-247	175°C (Max)
JAN1N5617 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	177	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	400 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 400 V	-	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
IDM08G120C5XTMA1 DIODE SIL CARB 1.2KV 8A TO252-2 Infineon Technologies	1,688	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	8A	1.95 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	365pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-2	-55°C ~ 175°C
1N5620 DIODE GEN PURP 800V 1A AXIAL Microchip Technology	300	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 800 V	-	-	-	Through Hole	A, Axial	-65°C ~ 200°C
STPSC10H065DI DIODE SIC 650V 10A TO220AC INS STMicroelectronics	999	RFQ	Datasheet	-	TO-220-2 Insulated, TO-220AC	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	-	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
IDW100E60FKSA1 DIODE GP 600V 150A TO247-3-1 Infineon Technologies	388	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	150A	2 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	40 µA @ 600 V	-	-	-	Through Hole	PG-TO247-3-1	-55°C ~ 175°C
1N3611 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	341	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 200 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
STPSC12065DY DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	7,548	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	750pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
ISL9R3060G2-F085 DIODE GEN PURP 600V 30A TO247-2 onsemi	418	RFQ	Datasheet	Stealth™	TO-247-2	Tube	Active	Avalanche	600 V	30A	2.4 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	100 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
UJ3D1210TS DIODE SIL CARB 1.2KV 10A TO220-2 Qorvo	8,990	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 1200 V	510pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
IDK08G120C5XTMA1 DIODE SIC 1.2KV 22.8A TO263-1 Infineon Technologies	373	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	22.8A	1.95 V @ 8 A	No Recovery Time > 500mA (Io)	-	40 µA @ 1200 V	365pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2-1	-55°C ~ 175°C
JANTX1N3611 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	356	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 200 V	-	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
IDK10G65C5XTMA2 DIODE SIL CARB 650V 10A TO263-2 Infineon Technologies	1,857	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	300pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
STPSC10H12GY-TR DIODE SIL CARB 1.2KV 10A D2PAK STMicroelectronics	1,893	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
IDL10G65C5XUMA2 DIODE SIL CARB 650V 10A VSON-4 Infineon Technologies	151	RFQ	Datasheet	CoolSiC™+	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Surface Mount	PG-VSON-4	-55°C ~ 150°C
STPSC10H12B2-TR DIODE SIL CARB 1.2KV 10A DPAK HV STMicroelectronics	4,653	RFQ	Datasheet	ECOPACK®2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	-	-	Surface Mount	DPAK HV	-40°C ~ 175°C
IDH10G65C5XKSA2 DIODE SIL CARB 650V 10A TO220-1 Infineon Technologies	1,046	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
STTH6010W DIODE GEN PURP 1KV 60A DO247 STMicroelectronics	787	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1000 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	20 µA @ 1000 V	-	-	-	Through Hole	DO-247	175°C (Max)

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