Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
IRD3CH24DF6

IRD3CH24DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

6,613
RFQ
Datasheet - - Bulk Obsolete - - - - - - - - - - - - -
IRD3CH31DF6

IRD3CH31DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

7,352
RFQ
Datasheet - - Bulk Obsolete - - - - - - - - - - - - -
IRD3CH53DB6

IRD3CH53DB6

DIODE GEN PURP 1.2KV 100A DIE

Infineon Technologies

6,919
RFQ
Datasheet - Die Bulk Obsolete Standard 1200 V 100A 2.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 270 ns 20 µA @ 1200 V - - - Surface Mount Die -40°C ~ 150°C
IRD3CH53DF6

IRD3CH53DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

2,541
RFQ
Datasheet - - Bulk Obsolete - - - - - - - - - - - - -
IRD3CH5DB6

IRD3CH5DB6

DIODE GEN PURP 1.2KV 5A DIE

Infineon Technologies

5,947
RFQ
Datasheet - Die Bulk Obsolete Standard 1200 V 5A 2.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 96 ns 100 nA @ 1200 V - - - Surface Mount Die -40°C ~ 150°C
IRD3CH82DF6

IRD3CH82DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

4,112
RFQ
Datasheet - - Bulk Obsolete - - - - - - - - - - - - -
IRD3CH9DB6

IRD3CH9DB6

DIODE GEN PURP 1.2KV 10A DIE

Infineon Technologies

8,722
RFQ
Datasheet - Die Bulk Obsolete Standard 1200 V 10A 2.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 154 ns 200 nA @ 1200 V - - - Surface Mount Die -40°C ~ 150°C
IRD3CH9DF6

IRD3CH9DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

5,274
RFQ
Datasheet - - Bulk Obsolete - - - - - - - - - - - - -
BAV103/S500,115

BAV103/S500,115

DIODE SWITCHING SOD80C

NXP USA Inc.

8,814
RFQ
Datasheet * - Tape & Reel (TR) Obsolete - - - - - - - - - - - - -
BAT54/LF1R

BAT54/LF1R

DIODE SCHOTTKY TO-236AB

NXP USA Inc.

8,618
RFQ

-

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - -
BAT721C/ZLR

BAT721C/ZLR

DIODE SCHOTTKY TO-236AB

NXP USA Inc.

6,651
RFQ

-

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - -
PMEG3010BEA/ZLF

PMEG3010BEA/ZLF

DIODE SCHOTTKY SOD323

NXP USA Inc.

5,403
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
PMEG3010BEA/ZLX

PMEG3010BEA/ZLX

DIODE SCHOTTKY SOD323

NXP USA Inc.

5,059
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
MSASC25W100K

MSASC25W100K

DIODE SCHOTTKY 100V 25A 2THINKEY

Microchip Technology

4,496
RFQ
Datasheet - - Bulk Active Schottky 100 V 25A 910 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V - - - Surface Mount 2-ThinKey™ -65°C ~ 175°C
SCS310APC9

SCS310APC9

DIODE SILICON CARBIDE 650V 10A

Rohm Semiconductor

7,092
RFQ
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 500pF @ 1V, 1MHz - - Through Hole - 175°C (Max)
APD240VG-E1

APD240VG-E1

DIODE SCHOTTKY 40V 2A DO15

Diodes Incorporated

5,558
RFQ
Datasheet - DO-204AC, DO-15, Axial Bulk Obsolete Schottky 40 V 2A 500 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - - - Through Hole DO-15 -65°C ~ 125°C
MBR5200VPBTR-E1

MBR5200VPBTR-E1

DIODE SCHOTTKY 200V 5A DO201

Diodes Incorporated

6,997
RFQ
Datasheet - DO-201AA, DO-27, Axial Tape & Box (TB) Obsolete Schottky 200 V 5A 950 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 200 V - - - Through Hole DO-201 -65°C ~ 150°C
MBR5200VPTR-E1

MBR5200VPTR-E1

DIODE SCHOTTKY 200V 5A DO201

Diodes Incorporated

8,311
RFQ
Datasheet - DO-201AA, DO-27, Axial Tape & Box (TB) Obsolete Schottky 200 V 5A 950 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 200 V - - - Through Hole DO-201 -65°C ~ 150°C
SB05-05C-M-TB-EX

SB05-05C-M-TB-EX

DIODE SCHOTTKY CP3

onsemi

6,776
RFQ

-

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - -
SCS302APC9

SCS302APC9

DIODE SILICON CARBIDE 650V 2A

Rohm Semiconductor

5,600
RFQ
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 2A 1.5 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 10.8 µA @ 650 V 110pF @ 1V, 1MHz - - Through Hole - 175°C (Max)
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