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Single Diodes
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDK02G65C5XTMA1DIODE SIL CARB 650V 2A TO263-2 |
4,519 |
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Datasheet | CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 2A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 330 µA @ 650 V | 70pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
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IDK04G65C5XTMA1DIODE SIL CARB 650V 4A TO263-2 |
4,835 |
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Datasheet | CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.8 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 670 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
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IDK06G65C5XTMA1DIODE SIL CARB 650V 6A TO263-2 |
8,619 |
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Datasheet | CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.8 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 1.1 mA @ 650 V | 190pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
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IDL04G65C5XUMA1DIODE SIL CARBIDE 650V 4A VSON-4 |
2,590 |
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Datasheet | CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 175°C |
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IDL06G65C5XUMA1DIODE SIL CARBIDE 650V 6A VSON-4 |
9,095 |
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Datasheet | CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
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IDL08G65C5XUMA1DIODE SIL CARBIDE 650V 8A VSON-4 |
3,703 |
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Datasheet | CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 250pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
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IDL12G65C5XUMA1DIODE SIL CARB 650V 12A VSON-4 |
5,233 |
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Datasheet | CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
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IDP1301GXUMA1DIODE GEN PURP DSO-19 |
5,055 |
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Datasheet | * | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IDW30E60AFKSA1DIODE GEN PURP 600V 60A TO247-3 |
7,578 |
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Datasheet | - | TO-247-3 | Tube | Discontinued at Digi-Key | Standard | 600 V | 60A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 143 ns | 40 µA @ 600 V | - | - | - | Through Hole | PG-TO247-3 | -40°C ~ 175°C |
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LFUSCD10065ADIODE SIL CARB 650V 10A TO220AC |
9,504 |
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Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 290pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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LFUSCD05120ADIODE SIL CARB 1.2KV 5A TO220AC |
7,017 |
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Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 1200 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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LFUSCD15120ADIODE SIL CARB 1.2KV 15A TO220AC |
4,573 |
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Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 375 µA @ 1200 V | 750pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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LFUSCD20065BDIODE SIL CARB 650V 20A TO247AD |
7,813 |
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Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 500 µA @ 650 V | 580pF @ 1V, 1MHz | - | - | Through Hole | TO-247AD | 175°C (Max) |
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IDC51D120T6MX1SA3DIODE GP 1.2KV 100A WAFER |
7,346 |
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Datasheet | - | Die | Bulk | Active | Standard | 1200 V | 100A | 2.05 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 18 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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SIDC06D120H8X1SA2DIODE GP 1.2KV 7.5A WAFER |
3,294 |
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Datasheet | - | Die | Bulk | Active | Standard | 1200 V | 7.5A | 1.97 V @ 7.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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SIDC08D120H8X1SA1DIODE GEN PURP 1.2KV 150A WAFER |
8,432 |
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Datasheet | - | - | Bulk | Active | Standard | 1200 V | 150A | 1.41 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | - | - | -40°C ~ 175°C |
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SIDC81D120H8X1SA3DIODE GEN PURP 1.2KV 150A WAFER |
6,278 |
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Datasheet | - | - | Bulk | Active | Standard | 1200 V | 150A | 2.15 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | - | - | -40°C ~ 175°C |
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IRD3CH101DB6DIODE GEN PURP 1.2KV 200A DIE |
4,094 |
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Datasheet | - | Die | Bulk | Obsolete | Standard | 1200 V | 200A | 2.7 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 360 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 175°C |
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IRD3CH11DF6DIODE CHIP EMITTER CONTROLLED |
7,637 |
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Datasheet | - | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRD3CH16DF6DIODE CHIP EMITTER CONTROLLED |
7,905 |
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Datasheet | - | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
