Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N5196UR/TR

JAN1N5196UR/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

2,654
RFQ
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 225 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 250 V - Military MIL-PRF-19500/118 Surface Mount DO-213AA -65°C ~ 175°C
JAN1N5194UR/TR

JAN1N5194UR/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

3,840
RFQ
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 70 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 70 V - Military MIL-PRF-19500/118 Surface Mount DO-213AA -55°C ~ 200°C
JAN1N5195US/TR

JAN1N5195US/TR

DIODE GP 180V 200MA DO213AA

Microchip Technology

9,240
RFQ

-

- DO-213AA Tape & Reel (TR) Active Standard 180 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 180 V - Military MIL-PRF-19500/118 Surface Mount DO-213AA -65°C ~ 175°C
JANTXV1N6078

JANTXV1N6078

DIODE GEN PURP 150V 1.3A E-PAK

Microchip Technology

2,620
RFQ
Datasheet - E, Axial Bulk Active Standard 150 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JANS1N5807

JANS1N5807

DIODE GEN PURP 50V 6A B AXIAL

Microchip Technology

5,222
RFQ

-

- B, Axial Bulk Active Standard 50 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANS1N5807/TR

JANS1N5807/TR

DIODE GEN PURP 50V 6A B AXIAL

Microchip Technology

3,218
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 50 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5804URS

JANTXV1N5804URS

DIODE GEN PURP 100V 1A A-MELF

Microchip Technology

4,435
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount A-MELF -65°C ~ 175°C
JANTXV1N5806URS

JANTXV1N5806URS

DIODE GEN PURP 150V 1A A-MELF

Microchip Technology

9,567
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount A-MELF -65°C ~ 175°C
JANTXV1N5806URS/TR

JANTXV1N5806URS/TR

UFR,FRR

Microchip Technology

8,194
RFQ
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
JANTXV1N5804URS/TR

JANTXV1N5804URS/TR

UFR,FRR

Microchip Technology

3,095
RFQ
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
UES1304

UES1304

DIODE GEN PURP 200V 5A B AXIAL

Microchip Technology

5,298
RFQ
Datasheet - B, Axial Bulk Active Standard 200 V 5A 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Through Hole B, Axial -55°C ~ 150°C
JAN1N6642UB2

JAN1N6642UB2

DIODE GEN PURP 75V 300MA UB2

Microchip Technology

7,365
RFQ

-

- 2-SMD, No Lead Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount UB2 -65°C ~ 175°C
JAN1N6642UB2R

JAN1N6642UB2R

DIODE GEN PURP 75V 300MA UB2

Microchip Technology

2,931
RFQ

-

- 2-SMD, No Lead Bulk Active Standard, Reverse Polarity 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount UB2 -65°C ~ 175°C
UES1304/TR

UES1304/TR

DIODE GEN PURP 200V 5A B AXIAL

Microchip Technology

6,558
RFQ

-

- B, Axial Tape & Reel (TR) Active Standard 200 V 5A 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Through Hole B, Axial -55°C ~ 150°C
JAN1N6642UB2/TR

JAN1N6642UB2/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

5,648
RFQ

-

- 2-SMD, No Lead Tape & Reel (TR) Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount UB2 -65°C ~ 175°C
JAN1N6642UB2R/TR

JAN1N6642UB2R/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

9,249
RFQ

-

- 2-SMD, No Lead Tape & Reel (TR) Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount UB2 -65°C ~ 175°C
JANHCC2N5339

JANHCC2N5339

BJT TRANSISTOR

Microchip Technology

9,956
RFQ

-

- - Bulk Active - - - - - - - - - - - - -
JANS1N6638U

JANS1N6638U

DIODE GEN PURP 125V 300MA D-5B

Microchip Technology

5,426
RFQ

-

- SQ-MELF, E Bulk Active Standard 125 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns 500 nA @ 150 V 2.5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
JANS1N6638US

JANS1N6638US

DIODE GP 125V 300MA B SQ-MELF

Microchip Technology

2,755
RFQ

-

- SQ-MELF, B Bulk Active Standard 125 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns - - Military MIL-PRF-19500/578 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N5711UR-1

JANTXV1N5711UR-1

DIODE SCHOTTKY 50V 33MA DO213AA

Microchip Technology

6,576
RFQ
Datasheet - DO-213AA Bulk Active Schottky 50 V 33mA 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Surface Mount DO-213AA -65°C ~ 150°C
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