Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UES1002SM-1/TR

UES1002SM-1/TR

DIODE GEN PURP 100V 2A A SQ-MELF

Microchip Technology

9,712
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 100 V 2A 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 100 V - - - Surface Mount A, SQ-MELF -55°C ~ 175°C
UES1001SM/TR

UES1001SM/TR

DIODE GEN PURP 1A A SQ-MELF

Microchip Technology

2,615
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard - 1A 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 50 V - - - Surface Mount A, SQ-MELF -55°C ~ 175°C
UES1003SM-1/TR

UES1003SM-1/TR

DIODE GEN PURP 1A A SQ-MELF

Microchip Technology

5,937
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard - 1A 975 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - - - Surface Mount A, SQ-MELF -55°C ~ 175°C
UES1105

UES1105

DIODE GEN PURP 300V 2A A AXIAL

Microchip Technology

7,490
RFQ

-

- A, Axial Bulk Active Standard 300 V 2A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Through Hole A, Axial -55°C ~ 150°C
UES1301

UES1301

DIODE GEN PURP 50V 6A B AXIAL

Microchip Technology

5,239
RFQ

-

- B, Axial Bulk Active Standard 50 V 6A 925 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - - - Through Hole B, Axial -55°C ~ 175°C
UES1101SME3/TR

UES1101SME3/TR

DIODE GEN PURP 50V 2.5A A AXIAL

Microchip Technology

9,724
RFQ

-

- Axial Tape & Reel (TR) Active Standard 50 V 2.5A 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 50 V - - - Through Hole A, Axial 175°C
UES1302E3/TR

UES1302E3/TR

DIODE GEN PURP 100V 6A B AXIAL

Microchip Technology

6,904
RFQ

-

- B, Axial Tape & Reel (TR) Active Standard 100 V 6A 925 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - - - Through Hole B, Axial 175°C
UES1105/TR

UES1105/TR

DIODE GEN PURP 300V 2A A AXIAL

Microchip Technology

3,350
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 300 V 2A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Through Hole A, Axial -55°C ~ 150°C
JANTX1N4148UB2

JANTX1N4148UB2

DIODE GEN PURP 75V 200MA UB2

Microchip Technology

6,135
RFQ

-

- 2-SMD, No Lead Bulk Active Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz Military MIL-PRF-19500/116 Surface Mount UB2 -65°C ~ 200°C
JANTX1N4148UB2/TR

JANTX1N4148UB2/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

2,729
RFQ
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Active Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz Military MIL-PRF-19500/116 Surface Mount UB2 -65°C ~ 200°C
UES1101SM

UES1101SM

DIODE GEN PURP 50V 2A A SQ-MELF

Microchip Technology

2,087
RFQ

-

- SQ-MELF, A Bulk Active Standard 50 V 2A 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - - - Surface Mount A, SQ-MELF -
JANTXV1N6626US

JANTXV1N6626US

DIODE GEN PURP 220V 1.75A D-5B

Microchip Technology

9,073
RFQ
Datasheet - SQ-MELF, E Bulk Discontinued at Digi-Key Standard 220 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 220 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
MNS1N6627US

MNS1N6627US

DIODE GP 440V 1.75A SQ-MELF B

Microchip Technology

5,103
RFQ

-

- SQ-MELF, B Bulk Active Standard 440 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 440 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount B, SQ-MELF -65°C ~ 150°C
JANTXV1N6626US/TR

JANTXV1N6626US/TR

DIODE GEN PURP 220V 1.75A D-5B

Microchip Technology

4,185
RFQ

-

- SQ-MELF, E Tape & Reel (TR) Active Standard 220 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 220 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTXV1N6626U/TR

JANTXV1N6626U/TR

DIODE GP 220V 1.75A SQ-MELF

Microchip Technology

6,027
RFQ

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 220 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 220 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount B, SQ-MELF -65°C ~ 150°C
UES1101SM/TR

UES1101SM/TR

DIODE GEN PURP 50V 2A A SQ-MELF

Microchip Technology

7,583
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 50 V 2A 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - - - Surface Mount A, SQ-MELF -
JANS1N5811/TR

JANS1N5811/TR

DIODE GEN PURP 150V 6A B AXIAL

Microchip Technology

2,579
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 150 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
UES1306E3

UES1306E3

DIODE GEN PURP 400V 3A B AXIAL

Microchip Technology

9,650
RFQ

-

- B, Axial Bulk Active Standard 400 V 3A 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 20 µA @ 400 V - - - Through Hole B, Axial -55°C ~ 150°C
JANS1N5811

JANS1N5811

DIODE GEN PURP 150V 6A B AXIAL

Microchip Technology

9,618
RFQ

-

- B, Axial Bulk Active Standard 150 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N4148UB

JANTXV1N4148UB

DIODE GEN PURP 75V 200MA UB

Microchip Technology

2,548
RFQ

-

- 3-SMD, No Lead Bulk Discontinued at Digi-Key Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz Military MIL-PRF-19500/116 Surface Mount UB -65°C ~ 200°C
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