Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N6077/TR

1N6077/TR

DIODE GEN PURP 100V 1.3A

Microchip Technology

3,317
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 100 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - - - Through Hole A, Axial -65°C ~ 155°C
1N4500/TR

1N4500/TR

DIODE GEN PURP DO35

Microchip Technology

3,493
RFQ
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard - - 1.1 V @ 300 mA Small Signal =< 200mA (Io), Any Speed 6 ns - - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N6076/TR

1N6076/TR

DIODE GEN PURP 50V 1.3A

Microchip Technology

5,517
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 50 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V - - - Through Hole A, Axial -65°C ~ 155°C
1N4500E3

1N4500E3

DIODE GEN PURP 80V 300MA DO35

Microchip Technology

7,105
RFQ
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 80 V 300mA 1.1 V @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) 6 ns 100 nA @ 75 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTXV1N6626/TR

JANTXV1N6626/TR

DIODE GEN PURP 220V 1.75A

Microchip Technology

5,564
RFQ

-

- E, Axial Tape & Reel (TR) Active Standard 220 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 220 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
UES1103/TR

UES1103/TR

DIODE GEN PURP 150V 2.5A

Microchip Technology

6,895
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 150 V 2.5A 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - - - Through Hole A, Axial 175°C (Max)
1N6077E3

1N6077E3

DIODE GEN PURP 100V 6A E AXIAL

Microchip Technology

3,738
RFQ

-

- E, Axial Bulk Active Standard 100 V 6A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - - - Through Hole E, Axial -65°C ~ 155°C
1N4500E3/TR

1N4500E3/TR

DIODE GP REV 80V 300MA DO35

Microchip Technology

2,147
RFQ
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 80 V 300mA 1.1 V @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) 6 ns 100 nA @ 75 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
SIDC110D170HX1SA2

SIDC110D170HX1SA2

DIODE GP 1.7KV 200A WAFER

Infineon Technologies

5,521
RFQ
Datasheet - Die Bulk Discontinued at Digi-Key Standard 1700 V 200A 1.8 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1700 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
CDLL6263/TR

CDLL6263/TR

DIODE SCHOTTKY 16V 33MA DO213AA

Microchip Technology

3,165
RFQ

-

- DO-213AA Tape & Reel (TR) Active Schottky 16 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2.2pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 150°C
1N6663US/TR

1N6663US/TR

DIODE GEN PURP 600V 500MA D-5A

Microchip Technology

5,264
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 600 V 500mA 1 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) - 50 nA @ 600 V - - - Surface Mount D-5A -65°C ~ 175°C
1N6077E3/TR

1N6077E3/TR

DIODE GEN PURP 100V 6A E AXIAL

Microchip Technology

6,826
RFQ

-

- E, Axial Tape & Reel (TR) Active Standard 100 V 6A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - - - Through Hole E, Axial -65°C ~ 155°C
1N6630US

1N6630US

DIODE GEN PURP 900V 1.4A D-5B

Microchip Technology

3,216
RFQ
Datasheet - SQ-MELF, E Bulk Active Standard 900 V 1.4A 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 4 µA @ 100 V - - - Surface Mount D-5B -65°C ~ 150°C
1N6630U

1N6630U

DIODE GP 990V 1.4A SQ-MELF B

Microchip Technology

5,063
RFQ

-

- SQ-MELF, B Bulk Active Standard 990 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 990 V 40pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 150°C
UES1103SM/TR

UES1103SM/TR

DIODE GP 150V 2.5A A SQ-MELF

Microchip Technology

3,147
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 2.5A 980 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - - - Surface Mount A, SQ-MELF 175°C
UES1103SME3

UES1103SME3

DIODE GP 150V 2.5A A SQ-MELF

Microchip Technology

4,736
RFQ

-

- SQ-MELF, A Bulk Active Standard 150 V 2.5A 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - - - Surface Mount A, SQ-MELF 175°C
UES1103SM-1

UES1103SM-1

DIODE GP 150V 2.5A A SQ-MELF

Microchip Technology

4,238
RFQ

-

- SQ-MELF, A Bulk Active Standard 150 V 2.5A 980 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - - - Surface Mount A, SQ-MELF -
JANTX1N5802URS

JANTX1N5802URS

DIODE GEN PURP 50V 1A A-MELF

Microchip Technology

4,984
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 50 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount A-MELF -65°C ~ 175°C
JANTX1N5804URS

JANTX1N5804URS

DIODE GEN PURP 100V 1A A-MELF

Microchip Technology

2,207
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount A-MELF -65°C ~ 175°C
JANTX1N5806URS

JANTX1N5806URS

DIODE GEN PURP 150V 1A A-MELF

Microchip Technology

2,084
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount A-MELF -65°C ~ 175°C
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