Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N6642UB/TR

JAN1N6642UB/TR

DIODE GEN PURP 75V 300MA UB

Microchip Technology

8,552
RFQ

-

- 3-SMD, No Lead Tape & Reel (TR) Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount UB -65°C ~ 175°C
JANTXV1N6625US/TR

JANTXV1N6625US/TR

DIODE GEN PURP 1.1KV 1A D-5A

Microchip Technology

9,109
RFQ
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 1100 V 1A 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 1 µA @ 1100 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTXV1N6625U/TR

JANTXV1N6625U/TR

DIODE GP 1.1KV 1A A SQ-MELF

Microchip Technology

9,889
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 1100 V 1A 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 1 µA @ 1100 V - Military MIL-PRF-19500/585 Surface Mount A, SQ-MELF -65°C ~ 150°C
JANTX1N3647/TR

JANTX1N3647/TR

DIODE GP REV 2100V 250MA S AXIAL

Microchip Technology

4,119
RFQ

-

- S, Axial Tape & Reel (TR) Active Standard 2100 V 250mA 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 21000 V - Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
JANTX1N3647

JANTX1N3647

DIODE GP 3KV 250MA S AXIAL

Microchip Technology

2,685
RFQ
Datasheet - S, Axial Bulk Active Standard 3000 V 250mA 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 3000 V - Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
JANTX1N6077

JANTX1N6077

DIODE GEN PURP 100V 1.3A A-PAK

Microchip Technology

4,636
RFQ
Datasheet - A, Axial Bulk Active Standard 100 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
JANTX1N6625/TR

JANTX1N6625/TR

DIODE GEN PURP 1.1KV 1A

Microchip Technology

7,568
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 1100 V 1A 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 nA @ 1100 V 10pF @ 10V, 1MHz Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTX1N6076

JANTX1N6076

DIODE GEN PURP 50V 1.3A A-PAK

Microchip Technology

5,932
RFQ
Datasheet - A, Axial Bulk Active Standard 50 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V - Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
JANTX1N6625

JANTX1N6625

DIODE GEN PURP 1.1KV 1A AXIAL

Microchip Technology

4,954
RFQ
Datasheet - A, Axial Bulk Active Standard 1100 V 1A 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 nA @ 1100 V 10pF @ 10V, 1MHz Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
UES1106E3

UES1106E3

RECTIFIER

Microchip Technology

3,048
RFQ

-

- - Bulk Active - - - - - - - - - - - - -
UES1102

UES1102

DIODE GEN PURP 100V 2A A AXIAL

Microchip Technology

5,904
RFQ

-

- A, Axial Bulk Active Standard 100 V 2A 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 100 V - - - Through Hole A, Axial -55°C ~ 175°C
1N6076

1N6076

DIODE GEN PURP 50V 1.3A AXIAL

Microchip Technology

8,886
RFQ
Datasheet - A, Axial Bulk Active Standard 50 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V - - - Through Hole A, Axial -65°C ~ 155°C
1N6077

1N6077

DIODE GEN PURP 100V 1.3A AXIAL

Microchip Technology

6,073
RFQ
Datasheet - A, Axial Bulk Active Standard 100 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - - - Through Hole A, Axial -65°C ~ 155°C
1N4500

1N4500

DIODE GEN PURP DO35

Microchip Technology

9,707
RFQ
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard - - 1.1 V @ 300 mA Small Signal =< 200mA (Io), Any Speed 6 ns - - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
GATELEAD28133HPSA1

GATELEAD28133HPSA1

ACCY GATE LEAD FOR MODULE

Infineon Technologies

4,316
RFQ

-

* - Tray Active - - - - - - - - - - - - -
UES1106/TR

UES1106/TR

DIODE GEN PURP 400V 1A

Microchip Technology

6,461
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V - - - Through Hole A, Axial -55°C ~ 150°C
PCFFS50120AF

PCFFS50120AF

DIODE SIL CARB 1.2KV WAFER DIE

onsemi

9,404
RFQ
Datasheet - Die Tray Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.75 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V - - - Surface Mount Die 175°C (Max)
UES1106E3/TR

UES1106E3/TR

RECTIFIER UFR,FRR

Microchip Technology

8,948
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - -
JANTXV1N6626

JANTXV1N6626

DIODE GEN PURP 220V 1.75A AXIAL

Microchip Technology

6,529
RFQ
Datasheet - E, Axial Bulk Active Standard 220 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 220 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
UES1102/TR

UES1102/TR

DIODE GEN PURP 100V 2A A AXIAL

Microchip Technology

6,363
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 100 V 2A 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 100 V - - - Through Hole A, Axial -55°C ~ 175°C
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