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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDM10G120C5XTMA1 DIODE SIL CARB 1.2KV 38A TO252-2 Infineon Technologies	4,234	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	38A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	62 µA @ 12 V	29pF @ 800V, 1MHz	-	-	Surface Mount	PG-TO252-2	-55°C ~ 150°C
RURG5060-F085 DIODE GEN PURP 600V 50A TO247-2 onsemi	387	RFQ	Datasheet	-	TO-247-2	Tube	Active	Avalanche	600 V	50A	1.6 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	250 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
1N5552 DIODE GEN PURP 600V 3A AXIAL Microchip Technology	911	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	600 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 600 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
APT100S20BG DIODE SCHOTTKY 200V 120A TO247 Microchip Technology	3,777	RFQ	Datasheet	-	TO-247-2	Tube	Active	Schottky	200 V	120A	950 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	2 mA @ 200 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 150°C
1N5712 DIODE SCHOTTKY 20V 75MA DO35 Microchip Technology	529	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	20 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
IDH10G120C5XKSA1 DIODE SIL CARB 1.2KV 10A TO220-1 Infineon Technologies	1,175	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	62 µA @ 1200 V	525pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
1N5806US DIODE GEN PURP 150V 1A D-5A Microchip Technology	72,209	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	-	-	Surface Mount	D-5A	-65°C ~ 175°C
RHRG5060-F085 DIODE GEN PURP 600V 50A TO247-2 onsemi	294	RFQ	Datasheet	-	TO-247-2	Tube	Active	Avalanche	600 V	50A	2.1 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	250 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
STPSC20065GY-TR DIODE SIL CARBIDE 650V 20A D2PAK STMicroelectronics	1,785	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 600 V	1250pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
1N6642US DIODE GEN PURP 75V 300MA D-5D Microchip Technology	1,066	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	-	-	Surface Mount	D-5D	-65°C ~ 175°C
CDLL5819/TR DIODE SCHOTTKY 45V 1A DO213AA Microchip Technology	256	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Schottky	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 125°C
IDDD16G65C6XTMA1 DIODE SIL CARB 650V 43A HDSOP-10 Infineon Technologies	4,841	RFQ	Datasheet	CoolSiC™+	10-PowerSOP Module	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	43A	-	No Recovery Time > 500mA (Io)	0 ns	53 µA @ 420 V	783pF @ 1V, 1MHz	-	-	Surface Mount	PG-HDSOP-10-1	-55°C ~ 175°C
IDH16G65C6XKSA1 DIODE SIL CARB 650V 34A TO220-2 Infineon Technologies	3,011	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	34A	1.35 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	53 µA @ 420 V	783pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
1N5418 DIODE GEN PURP 400V 3A B SQ-MELF Microchip Technology	384	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
1N5809 DIODE GEN PURP 100V 3A AXIAL Microchip Technology	210	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
JANTX1N5711-1 DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology	132	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	70 V	33mA	410 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/444	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
1N5811US DIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology	815	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
1N6638US DIODE GEN PURP 125V 300MA D-5D Microchip Technology	541	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Active	Standard	125 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5 ns	500 nA @ 125 V	2.5pF @ 0V, 1MHz	-	-	Surface Mount	D-5D	-65°C ~ 175°C
IDH20G65C6XKSA1 DIODE SIL CARB 650V 41A TO220-2 Infineon Technologies	1,342	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	41A	1.35 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	67 µA @ 420 V	970pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
JAN1N5819UR-1 DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology	175	RFQ	Datasheet	-	DO-213AB, MELF (Glass)	Bulk	Active	Schottky	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	Military	MIL-PRF-19500/586	Surface Mount	DO-213AB (MELF, LL41)	-65°C ~ 125°C

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