Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
APT75DQ60BG DIODE GP 600V 75A TO247 Microchip Technology	22,922	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	75A	2.5 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	31 ns	25 µA @ 600 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
JANTXV1N4148UR-1 DIODE GEN PURP 75V 200MA DO213AA Microchip Technology	7,199	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	75 V	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	25 nA @ 20 V	4pF @ 0V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	DO-213AA	-65°C ~ 175°C
STPSC6H065B-TR DIODE SIL CARBIDE 650V 6A DPAK STMicroelectronics	5,633	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	300pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-40°C ~ 175°C
STTH30L06G-TR DIODE GEN PURP 600V 30A D2PAK STMicroelectronics	3,910	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 600 V	-	-	-	Surface Mount	D2PAK	175°C (Max)
STPSC2H12B2Y-TR DIODE SIL CARBIDE 1.2KV 5A DPAK STMicroelectronics	12,015	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.5 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	12 µA @ 1200 V	190pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-40°C ~ 175°C
DST2045AX DIODE SCHOTTKY 45V 20A P600 Littelfuse Inc.	19,025	RFQ	Datasheet	-	P600, Axial	Tape & Reel (TR)	Active	Schottky	45 V	20A	580 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.2 mA @ 45 V	-	-	-	Through Hole	P600	-55°C ~ 155°C
APT75DQ120BG DIODE GP 1.2KV 75A TO247 Microchip Technology	3,293	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	75A	3.1 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	325 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
APT60D60BG DIODE GP 600V 60A TO247 Microchip Technology	1,014	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	1.8 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
IDM05G120C5XTMA1 DIODE SIL CARB 1.2KV 5A TO252-2 Infineon Technologies	1,779	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	33 µA @ 1200 V	301pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-2	-55°C ~ 175°C
APT60D120BG DIODE GP 1.2KV 60A TO247 Microchip Technology	955	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
APT60S20BG DIODE SCHOTTKY 200V 75A TO247 Microchip Technology	538	RFQ	Datasheet	-	TO-247-2	Tube	Active	Schottky	200 V	75A	900 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	1 mA @ 200 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 150°C
STPSC10H065GY-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	1,273	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
1N5712-1 DIODE SCHOTTKY 20V 75MA DO35 Microchip Technology	1,793	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	20 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
IDH05G120C5XKSA1 DIODE SIL CARB 1.2KV 5A TO220-1 Infineon Technologies	899	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	33 µA @ 1200 V	301pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
1N5615 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	270	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 200 V	45pF @ 12V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
STPSC10H065B-TR DIODE SIL CARBIDE 650V 10A DPAK STMicroelectronics	12,231	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-40°C ~ 175°C
1N5417 DIODE GEN PURP 200V 3A B AXIAL Microchip Technology	1,183	RFQ	Datasheet	-	Axial	Bulk	Active	Standard	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
IDH10G65C6XKSA1 DIODE SIL CARB 650V 24A TO220-2 Infineon Technologies	869	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	24A	1.35 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	33 µA @ 420 V	495pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
IDW75D65D1XKSA1 DIODE GEN PURP 650V 150A TO247-3 Infineon Technologies	2,129	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	650 V	150A	1.7 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	108 ns	40 µA @ 650 V	-	-	-	Through Hole	PG-TO247-3	-40°C ~ 175°C
JANTX1N5615 DIODE GEN PURP 200V 1A A-PAK Microchip Technology	2,371	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 200 V	45pF @ 12V, 1MHz	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C

Total 14609 Record«Prev 1... 20 21 22 232425 26 27...731 Next»

leon@xmagelec.com