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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
1PS59SB10,115 DIODE SCHOT 30V 200MA SMT3 MPAK NXP USA Inc.	8,897	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	Schottky	30 V	200mA	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	-	-	Surface Mount	SMT3; MPAK	125°C (Max)
1PS59SB20,115 DIODE SCHOT 40V 500MA SMT3 MPAK NXP USA Inc.	2,883	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	Schottky	40 V	500mA	550 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 35 V	90pF @ 0V, 1MHz	-	-	Surface Mount	SMT3; MPAK	125°C (Max)
BAS216,135 DIODE GEN PURP 75V 250MA SOD110 NXP USA Inc.	9,723	RFQ	Datasheet	-	SOD-110	Tape & Reel (TR)	Obsolete	Standard	75 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	1 µA @ 75 V	1.5pF @ 0V, 1MHz	-	-	Surface Mount	SOD-110	150°C (Max)
1N5712 RF DIODE SCHOTTKY 20V 250MW Broadcom Limited	5,967	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Obsolete	Schottky	20 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	1.2pF @ 0V, 1MHz	-	-	Through Hole	-	-65°C ~ 200°C
1N5712#T25 SCHOTTKY 20V 250MW Broadcom Limited	6,665	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Obsolete	Schottky	20 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	1.2pF @ 0V, 1MHz	-	-	Through Hole	-	-65°C ~ 200°C
BAS16WE6433HTMA1 DIODE GEN PURP 80V 250MA SOT323 Infineon Technologies	5,131	RFQ	Datasheet	-	SC-70, SOT-323	Tape & Reel (TR)	Obsolete	Standard	80 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	-	-	Surface Mount	PG-SOT323	150°C (Max)
BAT 60B E6433 DIODE SCHOTTKY 10V 3A SOD323-2 Infineon Technologies	9,597	RFQ	Datasheet	-	SC-76, SOD-323	Tape & Reel (TR)	Obsolete	Schottky	10 V	3A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	25 µA @ 8 V	30pF @ 5V, 1MHz	-	-	Surface Mount	PG-SOD323-3D	150°C (Max)
IDH04S60CAKSA1 DIODE SIL CARB 600V 4A TO220-2-2 Infineon Technologies	6,593	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	4A	1.9 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	130pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDH05S60CAKSA1 DIODE SIL CARB 600V 5A TO220-2-2 Infineon Technologies	2,175	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 600 V	240pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDH08S60CAKSA1 DIODE SIL CARB 600V 8A TO220-2-2 Infineon Technologies	5,098	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 600 V	310pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDH12S60CAKSA1 DIODE SIL CARB 600V 12A TO220-2 Infineon Technologies	8,966	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 600 V	530pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDH16S60CAKSA1 DIODE SIL CARB 600V 16A TO220-2 Infineon Technologies	3,535	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	650pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
MMBD914LT3HTMA1 DIODE GEN PURP 100V 250MA SOT23 Infineon Technologies	4,777	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	Standard	100 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 75 V	2pF @ 0V, 1MHz	-	-	Surface Mount	PG-SOT23	150°C (Max)
SDB06S60 DIODE SIL CARB 600V 6A TO263 Infineon Technologies	3,281	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	600 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	300pF @ 0V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
SDP10S30 DIODE SIL CARB 300V 10A TO220-3 Infineon Technologies	8,076	RFQ	Datasheet	CoolSiC™+	TO-220-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	300 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 300 V	600pF @ 0V, 1MHz	-	-	Through Hole	PG-TO220-3	-55°C ~ 175°C
SDT10S60 DIODE SIL CARB 600V 10A TO220-2 Infineon Technologies	4,537	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	350 µA @ 600 V	350pF @ 0V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
SIDC03D60F6X1SA2 DIODE GP 600V 6A WAFER Infineon Technologies	4,457	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	6A	1.6 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 150°C
SIDC04D60F6X1SA3 DIODE GP 600V 9A WAFER Infineon Technologies	6,676	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	9A	1.6 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 150°C
SIDC06D60E6X1SA3 DIODE GP 600V 10A WAFER Infineon Technologies	2,009	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	10A	1.25 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
SIDC06D60F6X1SA3 DIODE GP 600V 15A WAFER Infineon Technologies	4,017	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	15A	1.6 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 150°C

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