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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
1N3164 STANDARD RECTIFIER Microchip Technology	6,789	RFQ	Datasheet	-	DO-205AB, DO-9, Stud	Bulk	Active	Standard	200 V	300A	1.55 V @ 940 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 200 V	-	-	-	Stud Mount	DO-205AB (DO-9)	-65°C ~ 200°C
MSASC75H100F/TR POWER SCHOTTKY Microchip Technology	5,689	RFQ	-	*	-	Tape & Reel (TR)	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MSASC25H45K DIODE SCHOTTKY 45V 25A THINKEY2 Microchip Technology	6,077	RFQ	-	-	ThinKey™2	Bulk	Active	Schottky	45 V	25A	610 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	-	-	Surface Mount	ThinKey™2	-55°C ~ 150°C
UFR3250 DIODE GEN PURP 30A TO204AA Microchip Technology	4,367	RFQ	-	-	TO-204AA, TO-3	Bulk	Active	Standard	-	30A	1.2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	-	-	-	-	Through Hole	TO-204AA (TO-3)	-65°C ~ 175°C
UFR3280 DIODE GEN PURP 800V 30A DO203AA Microchip Technology	9,878	RFQ	-	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	800 V	30A	1.35 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	-	-	-	-	Stud Mount	DO-203AA (DO-4)	175°C (Max)
UFR3270 DIODE GEN PURP 700V 30A DO203AA Microchip Technology	2,289	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	700 V	30A	1.35 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	15 µA @ 700 V	100pF @ 10V, 1MHz	-	-	Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
UFR3250R DIODE GEN PURP 30A DO4 Microchip Technology	3,809	RFQ	-	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	-	30A	1.35 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	15 µA @ 500 V	100pF @ 10V, 1MHz	-	-	Stud Mount	DO-4 (DO-203AA)	-65°C ~ 175°C
1N6763 DIODE GEN PURP 100V 12A TO254 Microchip Technology	2,855	RFQ	Datasheet	-	TO-254-3, TO-254AA	Bulk	Active	Standard	100 V	12A	1.05 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 100 V	300pF @ 5V, 1MHz	-	-	Through Hole	TO-254	-55°C ~ 175°C
1N6764 DIODE GEN PURP 150V 12A TO254 Microchip Technology	3,837	RFQ	Datasheet	-	TO-254-3, TO-254AA	Bulk	Active	Standard	150 V	12A	1.05 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 150 V	300pF @ 5V, 1MHz	-	-	Through Hole	TO-254	-55°C ~ 175°C
1N6765 DIODE GEN PURP 200V 12A TO254 Microchip Technology	8,622	RFQ	Datasheet	-	TO-254-3, TO-254AA	Bulk	Active	Standard	200 V	12A	1.05 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	300pF @ 5V, 1MHz	-	-	Through Hole	TO-254	-55°C ~ 175°C
D1050N18TXPSA1 DIODE GEN PURP 1.8KV 1050A Infineon Technologies	5,596	RFQ	Datasheet	-	DO-200AB, B-PUK	Tray	Obsolete	Standard	1800 V	1050A	1 V @ 1000 A	Standard Recovery >500ns, > 200mA (Io)	-	60 mA @ 1800 V	-	-	-	Clamp On	-	-40°C ~ 180°C
MSASC25H45K/TR DIODE SCHOTTKY 45V 25A THINKEY2 Microchip Technology	5,799	RFQ	-	-	ThinKey™2	Tape & Reel (TR)	Active	Schottky, Reverse Polarity	45 V	25A	610 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	-	-	Surface Mount	ThinKey™2	-55°C ~ 150°C
1N6674R DIODE GP REV 500V 15A TO254 Microchip Technology	9,827	RFQ	Datasheet	-	TO-254-3, TO-254AA	Bulk	Active	Standard, Reverse Polarity	500 V	15A	1.35 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 400 V	150pF @ 10V, 1MHz	-	-	Through Hole	TO-254	-
1N6664R DIODE GEN PURP 100V 6A TO257 Microchip Technology	7,199	RFQ	-	-	TO-257-3	Bulk	Active	Standard, Reverse Polarity	100 V	6A	1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	250 nA @ 100 V	-	-	-	Through Hole	TO-257	-
1N6666R DIODE GP REV 200V 10A TO257 Microchip Technology	4,517	RFQ	-	-	TO-257-3	Bulk	Active	Standard, Reverse Polarity	200 V	10A	1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	75 µA @ 200 V	100pF @ 10V, 1MHz	-	-	Through Hole	TO-257	-65°C ~ 200°C
1N6665R DIODE GEN PURP 150V 10A TO257 Microchip Technology	6,987	RFQ	-	-	TO-257-3	Bulk	Active	Standard, Reverse Polarity	150 V	10A	1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	250 nA @ 150 V	-	-	-	Through Hole	TO-257	200°C
D2450N04TXPSA1 DIODE GEN PURP 400V 2450A Infineon Technologies	3,384	RFQ	Datasheet	-	DO-200AB, B-PUK	Tray	Active	Standard	400 V	2450A	880 mV @ 2000 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 400 V	-	-	-	Clamp On	-	-40°C ~ 180°C
D2450N06TXPSA1 DIODE GEN PURP 600V 2450A Infineon Technologies	9,960	RFQ	Datasheet	-	DO-200AB, B-PUK	Tray	Active	Standard	600 V	2450A	880 mV @ 2000 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 600 V	-	-	-	Clamp On	-	-40°C ~ 180°C
JANS1N5822/TR DIODE SCHOTTKY 40V 3A B AXIAL Microchip Technology	5,648	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Schottky	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Military	MIL-PRF-19500/620	Through Hole	B, Axial	-65°C ~ 125°C
1N3161R STANDARD RECTIFIER Microchip Technology	4,363	RFQ	Datasheet	-	DO-205AB, DO-9, Stud	Bulk	Active	Standard, Reverse Polarity	50 V	240A	1.25 V @ 240 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 50 V	-	-	-	Stud Mount	DO-205AB (DO-9)	-65°C ~ 200°C

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