Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
R34100

R34100

RECTIFIER

Microchip Technology

4,618
RFQ
Datasheet R34 DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1000 V 45A 1.15 V @ 90 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V - - - Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
R34120

R34120

RECTIFIER

Microchip Technology

4,004
RFQ
Datasheet R34 DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 45A 1.15 V @ 90 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V - - - Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
1N5813R

1N5813R

DIODE GEN PURP 75V 20A DO203AA

Microchip Technology

8,823
RFQ
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 75 V 20A 950 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 75 V 300pF @ 10V, 1MHz - - Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
1N5815R

1N5815R

RECTIFIER DIODE

Microchip Technology

5,364
RFQ
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 125 V 20A 950 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 125 V 300pF @ 10V, 1MHz - - Stud Mount DO-4 (DO-203AA) -65°C ~ 175°C
JANTX1N5822

JANTX1N5822

DIODE SCHOTTKY 40V 3A B AXIAL

Microchip Technology

7,523
RFQ

-

- B, Axial Bulk Active Schottky 40 V 3A 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - Military MIL-PRF-19500/620 Through Hole B, Axial -65°C ~ 125°C
JANTX1N5822/TR

JANTX1N5822/TR

DIODE SCHOTTKY 40V 3A B AXIAL

Microchip Technology

7,163
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Schottky 40 V 3A 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - Military MIL-PRF-19500/620 Through Hole B, Axial -65°C ~ 125°C
JANS1N6642UB2

JANS1N6642UB2

DIODE GEN PURP B SQ-MELF

Microchip Technology

3,246
RFQ

-

- SQ-MELF, B Bulk Active Standard - - 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns - 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount B, SQ-MELF -
JANS1N6642UB2R

JANS1N6642UB2R

DIODE GEN PURP B SQ-MELF

Microchip Technology

8,740
RFQ

-

- SQ-MELF, B Bulk Active Standard, Reverse Polarity - - 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns - 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount B, SQ-MELF -
JANS1N6642UB2R/TR

JANS1N6642UB2R/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

7,964
RFQ

-

- 2-SMD, No Lead Tape & Reel (TR) Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount UB2 -65°C ~ 175°C
JANS1N6642UB2/TR

JANS1N6642UB2/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

3,600
RFQ

-

- 2-SMD, No Lead Tape & Reel (TR) Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount UB2 -65°C ~ 175°C
1N6651

1N6651

RECTIFIER DIODE

Microchip Technology

3,994
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
JANS1N5552

JANS1N5552

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

6,589
RFQ
Datasheet - B, Axial Bulk Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANS1N5550

JANS1N5550

DIODE GEN PURP 200V 5A B AXIAL

Microchip Technology

2,604
RFQ

-

- B, Axial Bulk Active Standard 200 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANS1N5551

JANS1N5551

DIODE GEN PURP 400V 5A B AXIAL

Microchip Technology

7,254
RFQ

-

- B, Axial Bulk Active Standard 400 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANS1N5553

JANS1N5553

DIODE GEN PURP 800V 5A B AXIAL

Microchip Technology

2,456
RFQ

-

- B, Axial Bulk Active Standard 800 V 5A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANS1N5554

JANS1N5554

DIODE GEN PURP 5A B AXIAL

Microchip Technology

4,520
RFQ

-

- B, Axial Bulk Active Standard - 5A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANS1N5553/TR

JANS1N5553/TR

DIODE GEN PURP 800V 5A B AXIAL

Microchip Technology

5,232
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 800 V 5A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANS1N5552/TR

JANS1N5552/TR

DIODE GEN PURP 600V 3A

Microchip Technology

2,601
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANS1N5551/TR

JANS1N5551/TR

DIODE GEN PURP 400V 5A B AXIAL

Microchip Technology

3,308
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 400 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANS1N5554/TR

JANS1N5554/TR

DIODE GEN PURP 5A B AXIAL

Microchip Technology

6,740
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard - 5A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
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