Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTX1N5617US/TR

JANTX1N5617US/TR

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

2,351
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 µA @ 400 V 35pF @ 12V, 1MHz Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
1N6622U

1N6622U

DIODE GP 660V 1.2A A SQ-MELF

Microchip Technology

8,727
RFQ

-

- SQ-MELF, A Bulk Active Standard 660 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 660 V - - - Surface Mount A, SQ-MELF -65°C ~ 150°C
SCS215KGC

SCS215KGC

DIODE SIL CARB 1.2KV 15A TO220AC

Rohm Semiconductor

2,583
RFQ
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 15A 1.6 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 1200 V 790pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
1N6857-1

1N6857-1

SCHOTTKY RECTIFIER

Microchip Technology

8,732
RFQ
Datasheet - DO-204AH, DO-35, Axial Bulk Active Schottky 20 V 150mA 750 mV @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 4.5pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
CDLL5818E3

CDLL5818E3

DIODE SCHOTTKY 30V 1A DO213AB

Microchip Technology

9,913
RFQ
Datasheet - DO-213AB, MELF (Glass) Bulk Active Schottky 30 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V 0.9pF @ 5V, 1MHz - - Surface Mount DO-213AB (MELF, LL41) -
1N5620US/TR

1N5620US/TR

DIODE GEN PURP 800V 1A D-5A

Microchip Technology

5,371
RFQ
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - - - Surface Mount D-5A -65°C ~ 200°C
MNS1N5806US

MNS1N5806US

DIODE GEN PURP 160V 1A A SQ-MELF

Microchip Technology

3,115
RFQ

-

- SQ-MELF, A Bulk Active Standard 160 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount A, SQ-MELF -65°C ~ 175°C
1N5807US/TR

1N5807US/TR

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

8,942
RFQ

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5809US/TR

1N5809US/TR

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

9,988
RFQ

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
IDC40D120T6MX1SA4

IDC40D120T6MX1SA4

DIODE GP 1.2KV 75A WAFER

Infineon Technologies

9,611
RFQ
Datasheet - Die Bulk Obsolete Standard 1200 V 75A 2.05 V @ 75 A Standard Recovery >500ns, > 200mA (Io) - 14 µA @ 1200 V - - - Surface Mount Sawn on foil -40°C ~ 175°C
JAN1N5415US

JAN1N5415US

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

6,713
RFQ
Datasheet - B, Axial Bulk Active Standard 50 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
CDLL5195

CDLL5195

DIODE GP 180V 200MA DO213AA

Microchip Technology

7,506
RFQ
Datasheet - DO-213AA Bulk Active Standard 180 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 100 µA @ 180 V - - - Surface Mount DO-213AA -65°C ~ 175°C
APT60D100SG/TR

APT60D100SG/TR

DIODE GEN PURP 1KV 60A D3PAK

Microchip Technology

4,993
RFQ
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active Standard 1000 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 280 ns 250 µA @ 1000 V - - - Surface Mount D3PAK -55°C ~ 175°C
MNS1N5811US/TR

MNS1N5811US/TR

DIODE GP 150V 3A SQ-MELF B

Microchip Technology

6,349
RFQ

-

- SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5807US

JAN1N5807US

DIODE GEN PURP 50V 6A B SQ-MELF

Microchip Technology

6,768
RFQ
Datasheet - SQ-MELF, B Bulk Active Standard 50 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N5186

JANTX1N5186

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

4,791
RFQ
Datasheet - B, Axial Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 2 µA @ 100 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N5551US

JAN1N5551US

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

9,654
RFQ
Datasheet - SQ-MELF, E Bulk Active Standard 400 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JANTX1N5809US/TR

JANTX1N5809US/TR

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

7,897
RFQ

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N5614

JANTXV1N5614

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

8,524
RFQ
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N5623US

JAN1N5623US

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

8,929
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 1000 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1000 V 15pF @ 12V, 1MHz Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
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