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Diode Arrays

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Diode Configuration	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Grade	Qualification	Mounting Type	Supplier Device Package
SBR40U45CT DIODE ARRAY SBR 45V 20A TO-220-3 Diodes Incorporated	39	RFQ	Datasheet	SBR®	TO-220-3	Tube	Active	1 Pair Common Cathode	Super Barrier	45 V	20A	520 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	600 µA @ 45 V	-65°C ~ 150°C	-	-	Through Hole	TO-220-3
RBQ30NS100ATL DIODE ARR SCHOTT 100V 30A TO263S Rohm Semiconductor	45	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	1 Pair Common Cathode	Schottky	100 V	30A	770 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 100 V	150°C	Automotive	AEC-Q101	Surface Mount	TO-263S
APT30D30BCTG DIODE ARRAY GP 300V 30A TO247 Microchip Technology	82	RFQ	Datasheet	-	TO-247-3	Tube	Active	1 Pair Common Cathode	Standard	300 V	30A	1.4 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	250 µA @ 300 V	-55°C ~ 150°C	-	-	Through Hole	TO-247 [B]
IDFW80C65D1XKSA1 DIODE ARR GP 650V 74A TO247-3-AI Infineon Technologies	60	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	1 Pair Common Cathode	Standard	650 V	74A	1.7 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	73 ns	40 µA @ 650 V	-40°C ~ 175°C	-	-	Through Hole	PG-TO247-3-AI
SCS230KE2GC11 DIODE ARR SIC 1200V 15A TO-247N Rohm Semiconductor	44	RFQ	Datasheet	-	TO-247-3	Tube	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	1200 V	15A (DC)	1.6 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 1200 V	175°C	-	-	Through Hole	TO-247N
APT2X100DQ60J DIODE MODULE GP 600V 100A ISOTOP Microchip Technology	17	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Standard	600 V	100A	2.2 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	25 µA @ 600 V	-55°C ~ 175°C	-	-	Chassis Mount	ISOTOP®
APT2X30S20J DIODE MOD SCHOTT 200V 45A SOT227 Microchip Technology	34	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Schottky	200 V	45A	850 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	500 µA @ 200 V	-55°C ~ 150°C	-	-	Chassis Mount	SOT-227 (ISOTOP®)
APT2X61DQ120J DIODE MODULE GP 1200V 60A ISOTOP Microchip Technology	25	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Standard	1200 V	60A	3.1 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	265 ns	100 µA @ 1200 V	-	-	-	Chassis Mount	ISOTOP®
APT2X31D100J DIODE MODULE GP 1000V 28A ISOTOP Microchip Technology	30	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Standard	1000 V	28A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	290 ns	250 µA @ 1000 V	-	-	-	Chassis Mount	ISOTOP®
APT2X100D60J DIODE MODULE GP 600V 100A ISOTOP Microchip Technology	13	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Standard	600 V	100A	1.8 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	250 µA @ 600 V	-55°C ~ 175°C	-	-	Chassis Mount	ISOTOP®
MSC2X31SDA120J DIODE MOD SIC 1200V 30A SOT227 Microchip Technology	22	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	1200 V	30A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227 (ISOTOP®)
MSC2X51SDA070J DIODE MODULE SIC 700V 50A SOT227 Microchip Technology	80	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	700 V	50A (DC)	1.8 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227 (ISOTOP®)
MSC2X31SDA170J DIODE MOD SIC 1700V 30A SOT227 Microchip Technology	16	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	1700 V	30A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1700 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227 (ISOTOP®)
MSC2X100SDA120J DIODE MOD SIC 1200V 100A SOT227 Microchip Technology	10	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	1200 V	100A (DC)	1.8 V @ 100 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227 (ISOTOP®)
DD104N16KHPSA1 DIODE MOD GP 1600V 104A MOD Infineon Technologies	12	RFQ	Datasheet	-	Module	Tray	Active	1 Pair Common Cathode	Standard	1600 V	104A	1.4 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1600 V	-40°C ~ 150°C	-	-	Chassis Mount	Module
MSCDC100KK70D1PAG DIODE MODULE SIC 700V 100A D1P Microchip Technology	7	RFQ	Datasheet	-	Module	Box	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	700 V	100A	1.8 V @ 100 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 700 V	-40°C ~ 175°C	-	-	Chassis Mount	D1P
MSCDC200KK70D1PAG DIODE MODULE SIC 700V 200A D1P Microchip Technology	18	RFQ	Datasheet	-	Module	Box	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	700 V	200A	1.8 V @ 200 A	No Recovery Time > 500mA (Io)	0 ns	800 µA @ 700 V	-40°C ~ 175°C	-	-	Chassis Mount	D1P
MSCDC150KK120D1PAG DIODE MODULE SIC 1200V 150A D1P Microchip Technology	19	RFQ	Datasheet	-	Module	Box	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	1200 V	150A	1.8 V @ 150 A	No Recovery Time > 500mA (Io)	0 ns	600 µA @ 1200 V	-40°C ~ 175°C	-	-	Chassis Mount	D1P
MSCDC150A120D1PAG DIODE MODULE SIC 1200V 150A D1P Microchip Technology	4	RFQ	Datasheet	-	Module	Box	Active	1 Pair Series Connection	SiC (Silicon Carbide) Schottky	1200 V	150A	1.8 V @ 150 A	No Recovery Time > 500mA (Io)	0 ns	600 µA @ 1200 V	-40°C ~ 175°C	-	-	Chassis Mount	D1P
MSCDC100KK170D1PAG DIODE MODULE SIC 1700V 100A D1P Microchip Technology	4	RFQ	Datasheet	-	Module	Box	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	1700 V	100A	1.8 V @ 100 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 1700 V	-40°C ~ 175°C	-	-	Chassis Mount	D1P

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