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Diode Arrays

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Diode Configuration	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Grade	Qualification	Mounting Type	Supplier Device Package
DD540N22KTIMHPSA1 DIODE MOD GP 2200V 540A BGPB60AT Infineon Technologies	9,979	RFQ	Datasheet	-	Module	Tray	Active	1 Pair Series Connection	Standard	2200 V	540A	1.48 V @ 1.7 kA	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 2200 V	150°C (Max)	-	-	Chassis Mount	BG-PB60AT-1
DD175N30KHPSA1 DIODE MOD GP 3000V 223A MOD Infineon Technologies	3,775	RFQ	Datasheet	-	Module	Tray	Discontinued at Digi-Key	1 Pair Series Connection	Standard	3000 V	223A	2.05 V @ 600 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 3000 V	-40°C ~ 150°C	-	-	Chassis Mount	Module
JANS1N7043CAT1 DIODE ARR SCHOTT 100V 35A TO-254 Microchip Technology	6,731	RFQ	-	-	TO-254-3, TO-254AA	Bulk	Active	1 Pair Common Anode	Schottky	100 V	35A	1.3 V @ 35 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-65°C ~ 150°C	Military	MIL-PRF-19500/730	Through Hole	TO-254
JANS1N7043CCT1 DIODE ARR SCHOTT 100V 35A TO-254 Microchip Technology	4,918	RFQ	-	-	TO-254-3, TO-254AA	Bulk	Active	1 Pair Common Cathode	Schottky	100 V	35A	1.3 V @ 35 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-65°C ~ 150°C	Military	MIL-PRF-19500/730	Through Hole	TO-254
DD175N32KHPSA1 DIODE MOD GP 3200V 223A MOD Infineon Technologies	3,340	RFQ	Datasheet	-	Module	Tray	Discontinued at Digi-Key	1 Pair Series Connection	Standard	3200 V	223A	2.05 V @ 600 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 3200 V	-40°C ~ 150°C	-	-	Chassis Mount	Module
DD700N22KXPSA1 DIODE MOD 2200V 700A BGPB60E2A-1 Infineon Technologies	7,949	RFQ	Datasheet	-	Module	Tray	Active	1 Pair Series Connection	-	2200 V	700A	1.36 V @ 2200 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 2200 V	150°C	-	-	Chassis Mount	BG-PB60E2A-1
1N6659U1 DIODE ARRAY GEN PURP 200V 15A U1 Microchip Technology	3,756	RFQ	-	-	3-SMD, No Lead	Bulk	Active	1 Pair Common Cathode	Standard	200 V	15A (DC)	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	-	-	Surface Mount	U1 (SMD-1)
JANS1N6842U3 DIODE ARRAY SCHOTTKY 60V 10A U3 Microchip Technology	7,598	RFQ	-	-	3-SMD, No Lead	Bulk	Active	1 Pair Common Cathode	Schottky	60 V	10A	780 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 60 V	-65°C ~ 150°C	Military	MIL-PRF-19500/680	Surface Mount	U3 (SMD-0.5)
MSCDC150A170D1PAG DIODE MODULE SIC 1700V 150A D1P Microchip Technology	2,931	RFQ	Datasheet	-	Module	Box	Active	1 Pair Series Connection	SiC (Silicon Carbide) Schottky	1700 V	150A	1.8 V @ 150 A	No Recovery Time > 500mA (Io)	0 ns	600 µA @ 1700 V	-40°C ~ 175°C	-	-	Chassis Mount	D1P
MSCDC150KK170D1PAG DIODE MODULE SIC 1700V 150A D1P Microchip Technology	2,423	RFQ	Datasheet	-	Module	Box	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	1700 V	150A	1.8 V @ 150 A	No Recovery Time > 500mA (Io)	0 ns	600 µA @ 1700 V	-40°C ~ 175°C	-	-	Chassis Mount	D1P
DD435N36KHPSA1 DIODE MOD GP 3600V 573A MOD Infineon Technologies	2,664	RFQ	Datasheet	-	Module	Tray	Active	1 Pair Series Connection	Standard	3600 V	573A	1.71 V @ 1200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 3600 V	-40°C ~ 150°C	-	-	Chassis Mount	Module
MSCDC200A170D1PAG DIODE MODULE SIC 1700V 200A D1P Microchip Technology	8,387	RFQ	Datasheet	-	Module	Box	Active	1 Pair Series Connection	SiC (Silicon Carbide) Schottky	1700 V	200A	1.8 V @ 200 A	No Recovery Time > 500mA (Io)	0 ns	800 µA @ 1700 V	-40°C ~ 175°C	-	-	Chassis Mount	D1P
MSCDC200KK170D1PAG DIODE MODULE SIC 1700V 200A D1P Microchip Technology	7,207	RFQ	Datasheet	-	Module	Box	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	1700 V	200A	1.8 V @ 200 A	No Recovery Time > 500mA (Io)	0 ns	800 µA @ 1700 V	-40°C ~ 175°C	-	-	Chassis Mount	D1P
MSCDC450A120AG DIODE MODULE SIC 1200V 450A SP6 Microchip Technology	7,392	RFQ	Datasheet	-	Module	Tube	Active	1 Pair Series Connection	SiC (Silicon Carbide) Schottky	1200 V	450A	1.8 V @ 450 A	No Recovery Time > 500mA (Io)	0 ns	1.8 mA @ 1200 V	-40°C ~ 175°C	-	-	Chassis Mount	SP6
MSCDC600A120AG DIODE MODULE SIC 1200V 600A SP6 Microchip Technology	7,186	RFQ	-	-	Module	Tube	Active	1 Pair Series Connection	SiC (Silicon Carbide) Schottky	1200 V	600A	1.8 V @ 600 A	No Recovery Time > 500mA (Io)	0 ns	2.4 mA @ 1200 V	-40°C ~ 175°C	-	-	Chassis Mount	SP6
MSCDC450A170AG DIODE MODULE SIC 1700V 450A Microchip Technology	4,743	RFQ	Datasheet	-	Module	Tube	Active	1 Pair Series Connection	SiC (Silicon Carbide) Schottky	1700 V	450A	1.8 V @ 450 A	No Recovery Time > 500mA (Io)	0 ns	1.8 mA @ 1700 V	-40°C ~ 175°C	-	-	Chassis Mount	-
DD250S65K3NOSA1 DIODE MODULE GP 6500V AIHV130-6 Infineon Technologies	7,482	RFQ	Datasheet	-	Module	Tray	Active	2 Independent	Standard	6500 V	-	3.5 V @ 250 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-50°C ~ 125°C	-	-	Chassis Mount	A-IHV130-6
DZ3600S17K3B2NOSA1 DIODE MODULE GP 1700V AIHM190-1 Infineon Technologies	5,179	RFQ	Datasheet	-	Module	Tray	Not For New Designs	3 Independent	Standard	1700 V	-	2.2 V @ 3600 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-40°C ~ 125°C	-	-	Chassis Mount	A-IHM190-1
DD750S65K3NOSA1 DIODE MODULE GP 6500V AIHV130-6 Infineon Technologies	9,453	RFQ	Datasheet	-	Module	Tray	Active	2 Independent	Standard	6500 V	-	3.5 V @ 750 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-50°C ~ 125°C	-	-	Chassis Mount	A-IHV130-6
DD500S65K3NOSA1 DIODE MODULE GP 6500V AIHV130-6 Infineon Technologies	5,728	RFQ	Datasheet	-	Module	Bulk	Active	2 Independent	Standard	6500 V	-	3.5 V @ 500 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-50°C ~ 125°C	-	-	Chassis Mount	A-IHV130-6

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