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FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
APT8030LVRG MOSFET N-CH 800V 27A TO264 Microchip Technology	6,255	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	27A (Tc)	-	300mOhm @ 500mA, 10V	4V @ 2.5mA	510 nC @ 10 V	-	7900 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
APT34F100B2 MOSFET N-CH 1000V 35A T-MAX Microchip Technology	8,652	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	35A (Tc)	10V	380mOhm @ 18A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9835 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
APT34F100L MOSFET N-CH 1000V 35A TO264 Microchip Technology	6,495	RFQ	Datasheet	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	35A (Tc)	10V	400mOhm @ 18A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9835 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
APT50M75B2FLLG MOSFET N-CH 500V 57A T-MAX Microchip Technology	7,531	RFQ	Datasheet	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	57A (Tc)	-	75mOhm @ 28.5A, 10V	5V @ 2.5mA	125 nC @ 10 V	-	5590 pF @ 25 V	-	-	-	-	-	Through Hole	T-MAX™ [B2]
APT84F50B2 MOSFET N-CH 500V 84A T-MAX Microchip Technology	9,517	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	84A (Tc)	10V	65mOhm @ 42A, 10V	5V @ 2.5mA	340 nC @ 10 V	±30V	13500 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
APT10M09LVFRG MOSFET N-CH 100V 100A TO264 Microchip Technology	6,995	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	-	9mOhm @ 50A, 10V	4V @ 2.5mA	350 nC @ 10 V	-	9875 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
APT10078SLLG MOSFET N-CH 1000V 14A D3PAK Microchip Technology	4,423	RFQ	Datasheet	POWER MOS 7®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	14A (Tc)	10V	780mOhm @ 7A, 10V	5V @ 1mA	95 nC @ 10 V	±30V	2525 pF @ 25 V	-	403W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D3PAK
APT8030LVFRG MOSFET N-CH 800V 27A TO264 Microchip Technology	7,131	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	27A (Tc)	-	300mOhm @ 500mA, 10V	4V @ 2.5mA	510 nC @ 10 V	-	7900 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
STE139N65M5 MOSFET N-CH 650V 130A ISOTOP STMicroelectronics	4,387	RFQ	-	MDmesh™	ISOTOP	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	130A (Tc)	10V	17mOhm @ 65A, 10V	5V @ 250µA	363 nC @ 10 V	±25V	15600 pF @ 100 V	-	672W (Tc)	150°C (TJ)	-	-	Chassis Mount	ISOTOP
APT1201R4SFLLG MOSFET N-CH 1200V 9A D3PAK Microchip Technology	6,540	RFQ	Datasheet	POWER MOS 7®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	9A (Tc)	-	1.4Ohm @ 4.5A, 10V	5V @ 1mA	120 nC @ 10 V	-	2500 pF @ 25 V	-	-	-	-	-	Surface Mount	D3PAK
APT6013B2LLG MOSFET N-CH 600V 43A T-MAX Microchip Technology	9,543	RFQ	Datasheet	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	43A (Tc)	-	130mOhm @ 21.5A, 10V	5V @ 2.5mA	130 nC @ 10 V	-	5630 pF @ 25 V	-	-	-	-	-	Through Hole	T-MAX™ [B2]
APT6013LLLG MOSFET N-CH 600V 43A TO264 Microchip Technology	2,093	RFQ	Datasheet	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	43A (Tc)	10V	130mOhm @ 21.5A, 10V	5V @ 2.5mA	130 nC @ 10 V	±30V	5630 pF @ 25 V	-	565W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
SCTH50N120-7 SICFET N-CH 1200V 65A H2PAK-7 STMicroelectronics	8,993	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Obsolete	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A	20V	69mOhm @ 40A, 20V	5.1V @ 1mA	122 nC @ 20 V	+22V, -10V	1900 pF @ 400 V	-	270W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	H2PAK-7
IXTR210P10T MOSFET P-CH 100V 195A ISOPLUS247 Littelfuse Inc.	2,266	RFQ	Datasheet	TrenchP™	TO-247-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	195A (Tc)	10V	8mOhm @ 105A, 10V	4.5V @ 250µA	740 nC @ 10 V	±15V	69500 pF @ 25 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS247™
IXTT4N150HV-TRL MOSFET N-CH 1500V 4A TO268HV Littelfuse Inc.	6,354	RFQ	-	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1500 V	4A (Tc)	10V	6Ohm @ 2A, 10V	5V @ 250µA	44.5 nC @ 10 V	±30V	1576 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXTT)
APT12080LVRG MOSFET N-CH 1200V 16A TO264 Microchip Technology	5,789	RFQ	-	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	16A (Tc)	10V	800mOhm @ 8A, 10V	4V @ 2.5mA	485 nC @ 10 V	±30V	7800 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (L)
SCT30N120H SICFET N-CH 1200V 40A H2PAK-2 STMicroelectronics	6,036	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	20V	100mOhm @ 20A, 20V	3.5V @ 1mA	105 nC @ 20 V	+25V, -10V	1700 pF @ 400 V	-	270W (Tc)	-55°C ~ 200°C (TJ)	-	-	Surface Mount	H2PAK-2
STE110NS20FD MOSFET N-CH 200V 110A ISOTOP STMicroelectronics	2,812	RFQ	Datasheet	MESH OVERLAY™	ISOTOP	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	110A (Tc)	10V	24mOhm @ 50A, 10V	4V @ 250µA	504 nC @ 10 V	±20V	7900 pF @ 25 V	-	500W (Tc)	150°C (TJ)	-	-	Chassis Mount	ISOTOP®
IXFN120N60X3 DISCRETE MOSFET 120A 600V X3 SOT Littelfuse Inc.	9,951	RFQ	-	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT56F60B2 MOSFET N-CH 600V 60A T-MAX Microchip Technology	7,323	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	60A (Tc)	10V	110mOhm @ 28A, 10V	5V @ 2.5mA	280 nC @ 10 V	±30V	11300 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]

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