FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
2SK3480-AZ

2SK3480-AZ

MOSFET N-CH 100V 50A TO220AB

Renesas Electronics Corporation

200
RFQ
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 4.5V, 10V 31mOhm @ 25A, 10V - 74 nC @ 10 V ±20V 3600 pF @ 10 V - 1.5W (Ta), 84W (Tc) 150°C (TJ) - - Through Hole TO-220AB
UPA1740TP-E1-AZ

UPA1740TP-E1-AZ

UPA1740TP-E1-AZ - MOS FIELD EFFE

Renesas

155,000
RFQ
Datasheet - 8-PowerSOIC (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 440mOhm @ 3.5A, 10V 4.5V @ 1mA 12 nC @ 10 V ±30V 420 pF @ 10 V - 1W (Ta), 22W (Tc) 150°C - - Surface Mount 8-HSOP
PSMN4R3-80PS,127

PSMN4R3-80PS,127

NEXPERIA PSMN4R3-80PS - 120A, 80

NXP Semiconductors

1,756
RFQ
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4.3mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 8161 pF @ 40 V - 306W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK7107-55AIE,118

BUK7107-55AIE,118

NEXPERIA BUK7107 - N-CHANNEL TRE

NXP Semiconductors

2,400
RFQ
Datasheet TrenchMOS™ TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 50A, 10V 4V @ 1mA 116 nC @ 10 V ±20V 4500 pF @ 25 V Current Sensing 272W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
UPA2702TP-E2-AZ

UPA2702TP-E2-AZ

UPA2702 - N CHANNEL MOSFET

Renesas

5,000
RFQ
Datasheet - 8-PowerSOIC (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 35A (Tc) 4V, 10V 9.5mOhm @ 7A, 10V 2.5V @ 1mA 9 nC @ 5 V ±20V 900 pF @ 10 V - 3W (Ta), 22W (Tc) 150°C - - Surface Mount 8-HSOP
UPA2782GR-E1-A

UPA2782GR-E1-A

UPA2782GR-E1-A - SWITCHINGN-CHAN

Renesas

7,500
RFQ
Datasheet - 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4V, 10V 15mOhm @ 5.5A, 10V 2.5V @ 1mA 7.1 nC @ 5 V ±20V 660 pF @ 10 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
BSC0588NSIATMA1

BSC0588NSIATMA1

BSC0588- N-CHANNEL POWER MOSFET

Infineon Technologies

215,000
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
NP34N055SLE-E1-AY

NP34N055SLE-E1-AY

NP34N055 - POWER FIELD-EFFECT TR

Renesas

5,000
RFQ

-

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 34A (Ta) 4.5V, 10V 18mOhm @ 17A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 3000 pF @ 25 V - 1.2W (Ta), 88W (Tc) 175°C - - Surface Mount TO-252 (MP-3ZK)
IPI65R190C6XKSA1

IPI65R190C6XKSA1

IPI65R190C6 - 650V-700V COOLMOS

Infineon Technologies

999
RFQ
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
FQB25N33TM-F085OSCT

FQB25N33TM-F085OSCT

Power Field-Effect Transistor, 2

onsemi

336
RFQ
Datasheet - - Bulk Obsolete - - - - - - - - - - - - - - - - -
RJJ0621DPP-E0#T2

RJJ0621DPP-E0#T2

RJJ0621DPP - P CHANNEL SINGLE P

Renesas

650
RFQ
Datasheet - TO-220-3 Full Pack Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 4.5V, 10V 56mOhm @ 12.5A, 10V 2.5V @ 1mA - +10V, -20V 1550 pF @ 10 V - 35W (Tc) -55°C ~ 150°C - - Through Hole TO-220FP
NP60N04ILF-E1-AZ

NP60N04ILF-E1-AZ

NP60N04ILF-E1-AZ - SWITCHINGN-CH

Renesas

2,000
RFQ
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 6.5mOhm @ 30A, 10V 2.5V @ 250µA 75 nC @ 10 V ±20V 3900 pF @ 25 V - 1.2W (Ta), 100W (Tc) 175°C - - Surface Mount TO-252 (MP-3Z)
NP80N06MLG-S18-AY

NP80N06MLG-S18-AY

NP80N06MLG-S18-AY - SWITCHINGN-C

Renesas

17,700
RFQ
Datasheet - TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 8.6mOhm @ 40A, 10V 2.5V @ 250µA 128 nC @ 10 V ±20V 6900 pF @ 25 V - 1.8W (Ta), 115W (Tc) 175°C - - Through Hole MP-25K
2SK3714-S12-AZ

2SK3714-S12-AZ

2SK3714-S12-AZ - SWITCHING N-CHA

Renesas

103,269
RFQ
Datasheet - TO-220-3 Isolated Tab Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 10V 13mOhm @ 25A, 10V 2.5V @ 1mA 60 nC @ 10 V ±20V 3200 pF @ 10 V - 2W (Ta), 35W (Tc) 150°C - - Through Hole MP-45F
FCP165N65S3

FCP165N65S3

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

16,726
RFQ
Datasheet SuperFET® III TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4.5V @ 1.9mA 39 nC @ 10 V ±30V 1500 pF @ 400 V - 154W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
PSMN6R3-120PS

PSMN6R3-120PS

PSMN6R3-120PS - N-CHANNEL 120V S

NXP Semiconductors

319
RFQ
Datasheet - TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 120 V 70A (Ta) 10V 6.7mOhm @ 25A, 10V 4V @ 1mA 207.1 nC @ 10 V ±20V 11384 pF @ 60 V - 405W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
NP80N055MHE-S18-AY

NP80N055MHE-S18-AY

NP80N055MHE-S18-AY - SWITCHINGN-

Renesas

2,400
RFQ
Datasheet - TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 11mOhm @ 40A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 3600 pF @ 25 V - 1.8W (Ta), 120W (Tc) 175°C - - Through Hole MP-25K
2SK3057-AZ

2SK3057-AZ

2SK3057 - POWER TRS2

Renesas Electronics Corporation

2,378
RFQ
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
NP80N055KLE-E1-AY

NP80N055KLE-E1-AY

NP80N055KLE-E1-AY - SWITCHINGN-C

Renesas

1,600
RFQ
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 11mOhm @ 40A, 10V 2.5V @ 250µA 75 nC @ 10 V ±20V 4400 pF @ 25 V - 1.8W (Ta), 120W (Tc) 175°C - - Surface Mount TO-263-3
AUIRF4905L

AUIRF4905L

AUIRF4905 - 20V-150V P-CHANNEL A

Infineon Technologies

1,077
RFQ
Datasheet HEXFET® TO-262 Bulk Active P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262
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