FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSF450NE7NH3XUMA2

BSF450NE7NH3XUMA2

MOSFET N-CH 75V 5A/15A 2WDSON

Infineon Technologies

6,776
RFQ

-

OptiMOS™ 3 DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 5A (Ta), 15A (Tc) 7V, 10V 45mOhm @ 8A, 10V 3.8V @ 8µA 6 nC @ 10 V ±20V 390 pF @ 37.5 V - 2.2W (Ta), 18W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
BSF134N10NJ3GXUMA2

BSF134N10NJ3GXUMA2

MOSFET N-CH 100V 9A/40A 2WDSON

Infineon Technologies

3,453
RFQ

-

OptiMOS™ DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 40A (Tc) 6V, 10V 13.4mOhm @ 30A, 10V 3.5V @ 40µA 30 nC @ 10 V ±20V 2300 pF @ 50 V - 2.2W (Ta), 43W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
APT80GA90B2D40

APT80GA90B2D40

MOSFET N-CH 800V 34A T-MAX

Microchip Technology

2,937
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
MSC035SMA070SCT/R

MSC035SMA070SCT/R

MOSFET SIC 700 V 35 MOHM PSMT

Microchip Technology

8,820
RFQ
Datasheet mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 700 V 71A (Tc) 18V, 20V 44mOhm @ 30A, 20V 5V @ 2mA 93 nC @ 20 V +23V, -10V 1806 pF @ 700 V - 276W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
MSC020SMB120D/S

MSC020SMB120D/S

MOSFET SIC 1200 V 20 MOHM DIE

Microchip Technology

3,121
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
MSC045SMB120D/S

MSC045SMB120D/S

MOSFET SIC 1200 V 45 MOHM DIE

Microchip Technology

3,148
RFQ

-

- - Bulk Active - - - - - - - - - - - - - - - - -
MSC025SMA330B4N

MSC025SMA330B4N

MOSFET SIC 3300V 25 MOHM TO-247-

Microchip Technology

4,377
RFQ

-

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 3300 V 104A - - - - - - - - -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
MSC025SMA120SCT/R

MSC025SMA120SCT/R

MOSFET SIC 1200 V 25 MOHM PSMT

Microchip Technology

2,441
RFQ
Datasheet mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 108A (Tc) 18V, 20V 31mOhm @ 40A, 20V 3V @ 3mA 232 nC @ 20 V +23V, -10V 3633 pF @ 1000 V - 524W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
MSC030SMB120D/S

MSC030SMB120D/S

MOSFET SIC 1200 V 30 MOHM DIE

Microchip Technology

5,073
RFQ

-

- - Bulk Active - - - - - - - - - - - - - - - - -
MSC400SMA330B4N

MSC400SMA330B4N

MOSFET SIC 3300V 400 MOHM TO-247

Microchip Technology

8,045
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 3300 V 11A (Tc) 20V 520mOhm @ 5A, 20V 2.97V @ 1mA 37 nC @ 20 V +23V, -10V 579 pF @ 2.4 kV - 131W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
MSC011SMC120D/S

MSC011SMC120D/S

MOSFET SIC 1200 V 11 MOHM DIE

Microchip Technology

7,006
RFQ

-

- - Bulk Active - - - - - - - - - - - - - - - - -
MSC011SMB120SDT/R

MSC011SMB120SDT/R

MOSFET SIC 1200 V 11 MOHM, 7LD T

Microchip Technology

8,897
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
MSC080SMB120D/S

MSC080SMB120D/S

MOSFET SIC 1200 V 80 MOHM DIE

Microchip Technology

5,464
RFQ

-

- - Tube Active - - - - - - - - - - - - - - - - -
MSC040SMA120SDT/R

MSC040SMA120SDT/R

MOSFET SIC 1200 V 40 MOHM TO-263

Microchip Technology

6,632
RFQ
Datasheet mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 18V, 20V 50mOhm @ 40A, 20V 2.7V @ 2mA 137 nC @ 20 V +23V, -10V 1962 pF @ 1000 V - 338W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
MSC011SMB120D/S

MSC011SMB120D/S

MOSFET SIC 1200 V 11 MOHM DIE

Microchip Technology

6,768
RFQ

-

- - Bulk Active - - - - - - - - - - - - - - - - -
MSC060SMB120D/S

MSC060SMB120D/S

MOSFET SIC 1200 V 60 MOHM DIE

Microchip Technology

3,943
RFQ

-

- - Bulk Active - - - - - - - - - - - - - - - - -
MSC040SMB120D/S

MSC040SMB120D/S

MOSFET SIC 1200 V 40 MOHM DIE

Microchip Technology

5,413
RFQ

-

- - Bulk Active - - - - - - - - - - - - - - - - -
MSC025SMB120D/S

MSC025SMB120D/S

MOSFET SIC 1200 V 25 MOHM DIE

Microchip Technology

5,237
RFQ

-

- - Bulk Active - - - - - - - - - - - - - - - - -
MSC080SMA330B4N

MSC080SMA330B4N

MOSFET SIC 3300V 80 MOHM TO-247-

Microchip Technology

7,947
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 3300 V 41A (Tc) 20V 105mOhm @ 30A, 20V 2.97V @ 3mA 55 nC @ 20 V +23V, -10V 3462 pF @ 2.4 kV - 381W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
IGLT65R055D2

IGLT65R055D2

GAN TRANSISTOR 650 V G5

Infineon Technologies Canada Inc.

6,023
RFQ

-

CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 31A (Tc) - - 1.6V @ 2.6mA 6.6 nC @ 3 V -10V 330 pF @ 400 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8