FET, MOSFET Arrays

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NVXK2VR40WXT2

NVXK2VR40WXT2

MOSFET 6N-CH 1200V 55A APM32

onsemi

14
RFQ
Datasheet - 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 55A (Tc) 59mOhm @ 35A, 20V 4.3V @ 10mA 106nC @ 20V 1789pF @ 800V 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
FF17MR12W1M1HB11BPSA1

FF17MR12W1M1HB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

13
RFQ
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FS33MR12W1M1HB11BPSA1

FS33MR12W1M1HB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

3
RFQ
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FF8MR12W1M1HS4PB11BPSA1

FF8MR12W1M1HS4PB11BPSA1

MOSFET 2N-CH 1200V AG-EASY1B

Infineon Technologies

4
RFQ
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 100A (Tj) 8.1mOhm @ 100A, 18V 5.15V @ 40mA 297nC @ 18V 8800pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B
F3L8MR12W2M1HPB11BPSA1

F3L8MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V 85A AG-EASY2B

Infineon Technologies

24
RFQ
Datasheet EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 85A (Tj) 12mOhm @ 100A, 18V 5.15V @ 40mA 297nC @ 18V 8800pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY2B
FS13MR12W2M1HB70BPSA1

FS13MR12W2M1HB70BPSA1

MOSFET 6N-CH 1200V 62.5A

Infineon Technologies

15
RFQ
Datasheet CoolSiC™ - Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 62.5A (Tc) 11.7mOhm @ 62.5A, 18V 5.15V @ 28mA 200nC @ 18V 6050pF @ 800V - - - - - -
FF6MR12KM1HHPSA1

FF6MR12KM1HHPSA1

MOSFET

Infineon Technologies

10
RFQ
Datasheet - - Tray Active - - - - - - - - - - - - - - -
MSCSM170HM23CT3AG

MSCSM170HM23CT3AG

MOSFET 4N-CH 1700V 124A

Microchip Technology

2
RFQ
Datasheet - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
BSM300D12P2E001

BSM300D12P2E001

MOSFET 2N-CH 1200V 300A MODULE

Rohm Semiconductor

11
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 300A (Tc) - 4V @ 68mA - 35000pF @ 10V 1875W -40°C ~ 150°C (TJ) - - Chassis Mount Module
NVVR26A120M1WSB

NVVR26A120M1WSB

MOSFET 2N-CH 1200V AHPM15-CDE

onsemi

10
RFQ
Datasheet - 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDE
NVVR26A120M1WSS

NVVR26A120M1WSS

MOSFET 2N-CH 1200V AHPM15-CDI

onsemi

9
RFQ
Datasheet - 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDI
MSCSM170AM029CT6LIAG

MSCSM170AM029CT6LIAG

MOSFET 2N-CH 1700V 676A

Microchip Technology

8
RFQ
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 676A (Tc) 3.75mOhm @ 360A, 20V 3.3V @ 30mA 2136nC @ 20V 39600pF @ 1000V 3kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
DMT3020LDV-7

DMT3020LDV-7

MOSFET 2N-CH 30V 32A PWRDI3333

Diodes Incorporated

708
RFQ
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 32A (Tc) 20mOhm @ 9A, 10V 2.5V @ 250µA 7nC @ 10V 393pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type UXC)
QH8JA1TCR

QH8JA1TCR

MOSFET 2P-CH 20V 5A TSMT8

Rohm Semiconductor

59
RFQ
Datasheet - 8-SMD, Flat Leads Tape & Reel (TR) Active - 2 P-Channel (Dual) - 20V 5A 38mOhm @ 5A, 4.5V 1.2V @ 1mA 10.2nC @ 4.5V 720pF @ 10V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount TSMT8
ZXMC4559DN8TA

ZXMC4559DN8TA

MOSFET N/P-CH 60V 3.6A/2.6A 8SO

Diodes Incorporated

572
RFQ
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V 3.6A, 2.6A 55mOhm @ 4.5A, 10V 1V @ 250µA (Min) 20.4nC @ 10V 1063pF @ 30V, 1021pF @ 30V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
ZXMP6A16DN8QTA

ZXMP6A16DN8QTA

MOSFET 2P-CH 60V 2.9A 8SO

Diodes Incorporated

500
RFQ
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 60V 2.9A 85mOhm @ 2.9A, 10V 1V @ 250µA (Min) 24.2nC @ 10V 1021pF @ 30V 1.81W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
ZXMP3A16DN8TA

ZXMP3A16DN8TA

MOSFET 2P-CH 30V 4.2A 8SO

Diodes Incorporated

58
RFQ
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.2A 45mOhm @ 4.2A, 10V 1V @ 250µA (Min) 29.6nC @ 10V 1022pF @ 15V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
SH68N65DM6AG

SH68N65DM6AG

MOSFET 2N-CH 650V 64A 9ACEPACK

STMicroelectronics

17
RFQ
Datasheet ECOPACK® 9-PowerSMD Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 650V 64A (Tc) 41mOhm @ 23A, 10V 4.75V @ 250µA 116nC @ 10V 5900pF @ 100V 379W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 9-ACEPACK SMIT
FS55MR12W1M1HB11NPSA1

FS55MR12W1M1HB11NPSA1

MOSFET 6N-CH 1200V 15A AG-EASY1B

Infineon Technologies

18
RFQ
Datasheet EasyPACK™, CoolSiC™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel (Full Bridge) - 1200V (1.2kV) 15A (Tj) 79mOhm @ 15A, 18V 5.15V @ 6mA 45nC @ 18V 1350pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
MSCSM70AM19T1AG

MSCSM70AM19T1AG

MOSFET 2N-CH 700V 124A

Microchip Technology

21
RFQ
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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