FET, MOSFET Arrays

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
ISG0613N04NM6HSCATMA1

ISG0613N04NM6HSCATMA1

MOSFET 2N-CH 40V 42A 10WHITFN

Infineon Technologies

2,990
RFQ
Datasheet OptiMOS™ 6 10-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 40V 42A (Ta), 299A (Tc) 0.88mOhm @ 50A, 10V 2.8V @ 780µA 104nC @ 10V 6200pF @ 20V 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHITFN-10-1
ISG0614N06NM5HSCATMA1

ISG0614N06NM5HSCATMA1

MOSFET 2N-CH 60V 31A 10WHITFN

Infineon Technologies

2,990
RFQ
Datasheet OptiMOS™ 5 10-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 60V 31A (Ta), 233A (Tc) 1.6mOhm @ 50A, 10V 3.3V @ 86µA 102nC @ 10V 6400pF @ 30V 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHITFN-10-1
IAUTN08S5N012LATMA1

IAUTN08S5N012LATMA1

MOSFET 2N-CH 80V 300A PG-HSOF

Infineon Technologies

1,956
RFQ
Datasheet OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel, Common Drain, Common Source - 80V 300A (Tj) 1.15mOhm @ 100A, 10V 3.3V @ 275µA 24nC @ 10V 15340pF @ 40V 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOF-8-2
NXV08A170DB2

NXV08A170DB2

MOSFET 2N-CH 80V 200A APM12-CBA

onsemi

238
RFQ
Datasheet - 12-PowerDIP Module (1.118", 28.40mm) Tray Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 80V 200A (Tj) 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V 4V @ 250µA 195nC @ 10V 14000pF @ 40V - 175°C (TJ) Automotive AEC-Q100 Through Hole APM12-CBA
NVXK2TR40WXT

NVXK2TR40WXT

MOSFET 4N-CH 1200V 27A APM32

onsemi

60
RFQ
Datasheet - 32-PowerDIP Module (1.311", 33.30mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 27A (Tc) 59mOhm @ 35A, 20V 4.3V @ 10mA 106nC @ 20V 1789pF @ 800V 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
F435MR07W1D7S8B11ABPSA1

F435MR07W1D7S8B11ABPSA1

MOSFET 4N-CH 650V 35A MODULE

Infineon Technologies

42
RFQ
Datasheet EasyPACK™ 1B Module Tray Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 650V 35A 39.4mOhm @ 35A, 10V 4.45V @ 1.74mA 141nC @ 10V 6950pF @ 400V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
NXH030F120M3F1PTG

NXH030F120M3F1PTG

MOSFET 4N-CH 1200V 38A 22PIM

onsemi

26
RFQ
Datasheet - Module Tray Active SiCFET (Silicon Carbide) 4 N-Channel (Full Bridge) Depletion Mode 1200V (1.2kV) 38A (Tc) 38.5mOhm @ 30A, 18V 4.4V @ 15mA 110nC @ 18V 2246pF @ 800V 100W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
NXH010P120M3F1PG

NXH010P120M3F1PG

MOSFET 2N-CH 1200V 105A

onsemi

28
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 14.5mOhm @ 90A, 18V 4.4V @ 45mA 314nC @ 18V 6451pF @ 800V 272W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH010P120M3F1PTG

NXH010P120M3F1PTG

MOSFET 2N-CH 1200V 105A

onsemi

27
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 14.5mOhm @ 90A, 18V 4.4V @ 45mA 314nC @ 18V 6451pF @ 800V 272W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF33MR12W1M1HPB11BPSA1

FF33MR12W1M1HPB11BPSA1

MOSFET

Infineon Technologies

30
RFQ
Datasheet - - Tray Active - - - - - - - - - - - - - - -
DF11MR12W1M1HFB67BPSA1

DF11MR12W1M1HFB67BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

38
RFQ
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
NXH030P120M3F1PTG

NXH030P120M3F1PTG

MOSFET 2N-CH 1200V 42A

onsemi

28
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 42A (Tc) 38.5mOhm @ 30A, 18V 4.4V @ 15mA 110nC @ 18V 2271pF @ 800V 100W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH040P120MNF1PG

NXH040P120MNF1PG

MOSFET 2N-CH 1200V 30A

onsemi

28
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH008P120M3F1PTG

NXH008P120M3F1PTG

MOSFET 2N-CH 1200V 145A

onsemi

27
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH010P120MNF1PTNG

NXH010P120MNF1PTNG

MOSFET 2N-CH 1200V 114A

onsemi

28
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH020F120MNF1PG

NXH020F120MNF1PG

MOSFET 4N-CH 1200V 51A 22PIM

onsemi

28
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 51A (Tc) 30mOhm @ 50A, 20V 4.3V @ 20mA 213.5nC @ 20V 2420pF @ 800V 119W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
NXH004P120M3F2PTNG

NXH004P120M3F2PTNG

MOSFET 2N-CH 1200V 338A 36PIM

onsemi

40
RFQ
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 338A (Tj) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 1.1kW (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
NTK3142PT1H-ON

NTK3142PT1H-ON

MOSFET P-CH

onsemi

100,800
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
EFC4601-M-TR-ON

EFC4601-M-TR-ON

MOSFET N-CH

onsemi

1,895,000
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
SCH2822-TL-E

SCH2822-TL-E

PCH+SBD 2.5V DRIVE SERIES

onsemi

170,000
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
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